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STS4DNFS30

P1-P3P4-P6P7-P9P10-P12
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Electrical characteristics STS4DNFS30
4/12
2 Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
= 0 30 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, T
C
=125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 1 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 2A
V
GS
= 5V, I
D
= 2A
0.044 0.055
0.085
Ω
Ω
Table 5. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation:
Reverse leakage
current
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
6
200
15
µA
mA
V
F
(1)
Zero gate voltage
drain current (V
GS
= 0)
T
j
= 25°C
T
j
= 125°C
I
F
= 2A
0.325
0.45
0.375
V
V
T
j
= 25°C
T
j
= 125°C
I
F
= 4A
0.43
0.53
0.51
V
V
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
Forward
transconductance
V
DS
=10V, I
D
=2A 5 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
330
115
28
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 15V, I
D
= 4.5A,
V
GS
= 5V
(see Figure 13)
4.7
1.2
2.1
nC
nC
nC
P0.24I
FAV()
× 0.068I
F
2
RMS()+=
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STS4DNFS30 Electrical characteristics
5/12
Table 7. Switching times
Symbol Parameter Test Conditions Min. Typ. Max Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 15V, I
D
= 2A,
R
G
= 4.7Ω, V
GS
= 5V
(see Figure 12)
9
17
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 2A,
R
G
= 4.7Ω, V
GS
= 5V
(see Figure 12)
15
6
ns
ns
Table 8. Source drain diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
4.5
13
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 4.5A, V
GS
= 0 1.2 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.5A, di/dt = 100A/µs
V
DD
= 15V, T
j
= 150°C
(see Figure 17)
22
14.3
1.3
ns
nC
A
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Electrical characteristics STS4DNFS30
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Source-drain diode forward
characteristics
Figure 6. Static drain-source on resistance
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P1-P3P4-P6P7-P9P10-P12

STS4DNFS30

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Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 30V 0.044 Ohm 4.5A
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