MAX807L/M/N
Full-Featured µP Supervisory Circuit with
±1.5% Reset Accuracy
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Watchdog Output
WDO remains high if there is a transition or pulse at
WDI during the watchdog-timeout period. WDO goes
low if no transition occurs at WDI during the watchdog-
timeout period. The watchdog function is disabled and
WDO is a logic high when V
CC
is below the reset
threshold or WDI is an open circuit. To generate a sys-
tem reset on every watchdog fault, diode-OR connect
WDO to MR (Figure 6). When a watchdog fault occurs
in this mode, WDO goes low, which pulls MR low, caus-
ing a reset pulse to be issued. As soon as reset is
asserted, the watchdog timer clears and WDO returns
high. With WDO connected to MR, a continuous high or
low on WDI will cause 200ms reset pulses to be issued
every 1.6s.
Chip-Enable Signal Gating
The MAX807 provides internal gating of chip-enable
(CE) signals to prevent erroneous data from corrupting
the CMOS RAM in the event of a power failure. During
normal operation, the CE gate is enabled and passes
all CE transitions. When reset is asserted, this path
becomes disabled, preventing erroneous data from
corrupting the CMOS RAM. The MAX807 uses a series
transmission gate from the Chip-Enable Input (CE IN) to
the Chip-Enable Output (CE OUT) (Figure 1).
The 8ns (max) chip-enable propagation from CE IN to
CE OUT enables the MAX807 to be used with most µPs.
Chip-Enable Input
CE IN is high impedance (disabled mode) while RESET
is asserted. During a power-down sequence when V
CC
passes the reset threshold, the CE transmission gate
disables and CE IN becomes high impedance 28µs
after reset is asserted (Figure 7). During a power-up
sequence, CE IN remains high impedance (regardless
of CE IN activity) until reset is deasserted following the
reset-timeout period.
In the high-impedance mode, the leakage currents into
this input are ±1µA (max) over temperature. In the low-
impedance mode, the impedance of CE IN appears as
a 75Ω resistor in series with the load at CE OUT.
The propagation delay through the CE transmission
gate depends on both the source impedance of the
drive to CE IN and the capacitive loading on CE OUT