www.vishay.com Document Number: 91100
2 S09-0015-Rev. A, 19-Jan-09
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Note
a. R
th
is measured at T
J
approximately 90 °C.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
oss
eff. is a fixed capacitance that givs the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
a
R
thJA
-58
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain)
a
R
thJC
-0.56
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 500 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.59 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 3.0 - 5.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 50
µA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 10 A
b
- 0.26 0.29 Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 10 A 6.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 2830 -
pF
Output Capacitance C
oss
- 330 -
Reverse Transfer Capacitance C
rss
-38-
Output Capacitance C
oss
V
GS
= 0 V
V
DS
= 1.0 V, f = 1.0 MHz - 3310 -
V
DS
= 400 V, f = 1.0 MHz - 93 -
Effective Output Capacitance C
oss
eff. V
DS
= 0 V to 400 V
c
- 155 -
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 17 A, V
DS
= 400 V,
see fig. 6 and 13
b
- - 120
nC Gate-Source Charge Q
gs
--34
Gate-Drain Charge Q
gd
--54
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 17 A,
R
G
= 7.5 Ω, see fig. 10
b
-22-
ns
Rise Time t
r
-60-
Turn-Off Delay Time t
d(off)
-45-
Fall Time t
f
-30-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--17
A
Pulsed Diode Forward Current
a
I
SM
--68
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
- 520 780 ns
Body Diode Reverse Recovery Charge Q
rr
-5.38.0µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
