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IRFB18N50KPBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91100
4 S09-0015-Rev. A, 19-Jan-09
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 30 60 90 120 150
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
17A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
0.2 0.5 0.8 1.1 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J
°
T = 25 C
J
°
0.1
1
10
100
1000
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
Document Number: 91100 www.vishay.com
S09-0015-Rev. A, 19-Jan-09 5
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
25 50 75 100 125 150
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
A
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
Driver
15 V
20 V
I
AS
V
DS
t
p
www.vishay.com Document Number: 91100
6 S09-0015-Rev. A, 19-Jan-09
IRFB18N50K, SiHFB18N50K
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
25 50 75 100 125 150
0
150
300
450
600
750
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
7.6A
11A
17A
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRFB18N50KPBF

Mfr. #:
Buy IRFB18N50KPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SIHP18N50C-E3
Lifecycle:
New from this manufacturer.
Delivery:
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