T-Ma x
TM
TO-264
N-Channel MOSFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die MOSFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
32
20
120
±30
1875
16
Min Typ Max
1040
0.12
0.11
-55 150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Gate-Source Voltage
Single Pulse Avalanche Energy
2
Avalanche Current,
Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C
= 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
R
θ
JC
R
θ
CS
T
J
,T
STG
T
L
W
T
Torque
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
FEATURES
• Fast switching with low EMI/RFI
• Low R
DS(on)
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT31M100B2
APT31M100L
1000V, 32A, 0.38Ω Max
APT31M100B2
APT31M100L
Power MOS 8
™
is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C
rss
"Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in fl yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
Microsemi Website - http://www.microsemi.com
050-8071 Rev D 7-2011