BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 08 — 22 June 2007 4 of 15
NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 100 V
V
CEO
collector-emitter voltage open base - 80 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 1 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 1.5 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- 0.2 A
P
tot
total power dissipation T
amb
≤ 25 °C
BC639
[1]
- 0.83 W
BCP56
[1]
- 0.64 W
[2]
- 0.96 W
BCX56
[1]
- 0.5 W
[2]
- 0.85 W
[3]
- 1.25 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
