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BC639,112

P1-P3P4-P6P7-P9P10-P12P13-P15
BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 08 — 22 June 2007 7 of 15
NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa814
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
006aaa089
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 08 — 22 June 2007 8 of 15
NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 1 cm
2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa815
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
006aaa090
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
BC639_BCP56_BCX56_8 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 08 — 22 June 2007 9 of 15
NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ = 0.02.
FR4 PCB, mounting pad for collector 6 cm
2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa816
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
= 0 A - - 100 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 °C
--10µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
I
C
= 5 mA 63 - -
I
C
= 150 mA 63 - 250
I
C
= 500 mA
[1]
40 - -
DC current gain V
CE
=2V
h
FE
selection -10 I
C
= 150 mA 63 - 160
h
FE
selection -16 I
C
= 150 mA 100 - 250
V
CEsat
collector-emitter
saturation voltage
I
C
= 500 mA; I
B
=50mA
[1]
- - 500 mV
V
BE
base-emitter voltage V
CE
=2V; I
C
= 500 mA
[1]
--1V
C
c
collector capacitance V
CB
=10V;I
E
=i
e
=0A;
f=1MHz
-6-pF
f
T
transition frequency V
CE
=5V; I
C
=50mA;
f = 100 MHz
100 180 - MHz
P1-P3P4-P6P7-P9P10-P12P13-P15

BC639,112

Mfr. #:
Buy BC639,112
Manufacturer:
NXP Semiconductors
Description:
TRANS NPN 80V 1A TO-92
Lifecycle:
New from this manufacturer.
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