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MJ21196G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1 Publication Order Number:
MJ21195/D
MJ21195G - PNP
MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5V V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
250
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
16 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
250 VOLTS, 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ21195G TO−204
(Pb−Free)
100 Units / Tray
MJ2119xG
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ2119x = Device Code
x = 5 or 6
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
MJ21196G TO−204
(Pb−Free)
100 Units / Tray
1
2
3
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN
MJ21195G − PNP MJ21196G − NPN
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol Min Typical Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − − Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− − 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
5
2.5
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, V
CE
= 5 Vdc)
h
FE
25
8
−
−
75 −
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product
f, CURRENT BANDWIDTH PRODUCT (MHz)
T
PNP MJ21195G
f, CURRENT BANDWIDTH PRODUCT (MHz)
T
NPN MJ21196G
I
C
, COLLECTOR CURRENT (AMPS)
0.1 1.0 10
6.5
6.0
5.0
4.0
3.0
2.0
1.0
0
7.5
7.0
6.0
4.0
3.0
5.0
1.0
2.0
0.1 1.0 10
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 5 V
10 V
T
J
= 25°C
f
test
= 1 MHz
6.5
4.5
3.5
5.5
1.5
2.5
5.5
4.5
3.5
2.5
1.5
0.5
MJ21195G − PNP MJ21196G − NPN
http://onsemi.com
3
I
B
= 2 A
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
PNP MJ21195G NPN MJ21196G
h
FE
, DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP MJ21195G
PNP MJ21195G
NPN MJ21196G
NPN MJ21196G
1000
100
10
100101.00.1
T
J
= 100°C 25°C
-25°C
V
CE
= 20 V
1000
100
10
100101.00.1
T
J
= 100°C 25°C
-25°C
V
CE
= 20 V
1000
100
10
100101.00.1
1000
100
10
100101.00.1
30
25
20
15
10
5.0
0
5.0010152025
30
25
20
15
10
0
5.0010152025
5.0
1.5 A
1 A
0.5 A
I
B
= 2 A
T
J
= 25°C
T
J
= 100°C 25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
1.5 A
1 A
0.5 A
T
J
= 25°C
P1-P3P4-P6

MJ21196G

Mfr. #:
Buy MJ21196G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 250W NPN
Lifecycle:
New from this manufacturer.
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