MJ21196G

MJ21195G PNP MJ21196G NPN
http://onsemi.com
4
Figure 9. Typical Saturation Voltages
I
C
, COLLECTOR CURRENT (AMPS)
SATURATION VOLTAGE (VOLTS)
Figure 10. Typical Saturation Voltages
I
C
, COLLECTOR CURRENT (AMPS)
SATURATION VOLTAGE (VOLTS)
Figure 11. Typical BaseEmitter Voltage
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Typical BaseEmitter Voltage
I
C
, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate I
C
V
CE
limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of Figure 13 is based on T
J(pk)
= 200°C;
T
C
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
PNP MJ21195G NPN MJ21196G
TYPICAL CHARACTERISTICS
PNP MJ21195G NPN MJ21196G
3.0
2.5
2.0
1.5
1.0
0.5
0
100101.00.1
1.6
1.2
1.0
0.8
0.6
0.4
0
100101.00.1
0.2
10
1.0
0.1
100101.00.1
10
1.0
0.1
100101.00.1
100
10
1.0
0.1
100101.0 1000
T
J
= 25°C
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
1.4
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
V
CE(sat)
T
J
= 25°C
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
10 ms
50 ms
250 ms
1 sec
MJ21195G PNP MJ21196G NPN
http://onsemi.com
5
Figure 14. MJ21195 Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 15. MJ21196 Typical Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
0.5 W
0.5 W
8.0 W
-50 V
DUT
DUT
+50 V
Figure 16. Typical Total Harmonic Distortion
Figure 17. Total Harmonic Distortion Test Circuit
FREQUENCY (Hz)
T
HD
, TOTAL HARMONIC
DISTORTION (%)
10000
1000
100
100101.00.1
10000
1000
100
100101.00.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10000010000100010010
T
J
= 25°C
f
test
= 1 MHz
C
ib
C
ob
T
J
= 25°C
f
test
= 1 MHz
C
ib
C
ob
MJ21195G PNP MJ21196G NPN
http://onsemi.com
6
PACKAGE DIMENSIONS
TO204 (TO3)
CASE 107
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77
A
N
E
C
K
T
SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y
M
T
M
Y
M
0.13 (0.005) T
Q
Y
2
1
U
L
G
B
V
H
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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MJ21196G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 250W NPN
Lifecycle:
New from this manufacturer.
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