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DMC2400UV-13

P1-P3P4-P6P7-P9P10-P10
DMC2400UV
Document number: DS35537 Rev. 7 - 2
1 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= +25°C
Q1 20V
0.5 @ V
GS
= 4.5V
1030mA
0.9 @ V
GS
= 1.8V
740mA
Q2 -20V
1.0 @ V
GS
= -4.5V
-700mA
2.0 @ V
GS
= -1.8V
-460mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage V
GS(th)
<1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
ESD Protected Gate to 2kV HBM
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.003 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMC2400UV-7 SOT563 3000/Tape & Reel
DMC2400UV-13 SOT563 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
ESD PROTECTED TO 2kV
Top View Bottom View
Equivalent Circuit
CA3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
SOT563
Top View
e3
Green
DMC2400UV
Document number: DS35537 Rev. 7 - 2
2 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
Maximum Ratings - Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
1030
800
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
1150
900
mA
Continuous Drain Current (Note 6) V
GS
= 1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
740
570
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
870
700
mA
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
3 A
Maximum Body Diode Continuous Current
I
S
800 mA
Maximum Ratings - Q2 P-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-700
-550
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-820
-640
mA
Continuous Drain Current (Note 6) V
GS
= -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-460
-350
mA
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-550
-420
mA
Pulsed Drain Current (10s pulse, duty cycle = 1%)
I
DM
-2 A
Maximum Body Diode Continuous Current
I
S
-800 mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
0.45 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
281 °C/W
t<10s 210 °C/W
Total Power Dissipation (Note 6)
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
129 °C/W
t<10s 97 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
DMC2400UV
Document number: DS35537 Rev. 7 - 2
3 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
Electrical Characteristics - Q1 N-CHANNEL (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
—
— V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— —
100 nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±1
µA
V
GS
= ±5V, V
DS
= 0V
— —
±4.0
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 — 0.9 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS(ON)
—
0.3 0.48
V
GS
= 5.0V, I
D
= 200mA
—
0.35 0.5
V
GS
= 4.5V, I
D
= 200mA
—
0.45 0.7
V
GS
= 2.5V, I
D
= 200mA
—
0.55 0.9
V
GS
= 1.8V, I
D
= 100mA
—
0.65 1.5
V
GS
= 1.5V, I
D
= 50mA
—
2
—
V
GS
= 1.2V, I
D
= 1mA
Forward Transfer Admittance
|Y
fs
|
—
1.4
—
S
V
DS
= 3V, I
D
= 200mA
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= 500mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 37.1 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 6.5 —
Reverse Transfer Capacitance
C
rss
— 4.8 —
Gate Resistance
R
g
— 68 —
V
DS
= 0V, V
GS
= 0V,
Total Gate Charge
Q
g
— 0.5 —
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
— 0.07 —
Gate-Drain Charge
Q
gd
— 0.1 —
Turn-On Delay Time
t
D(on)
— 4.06 —
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47, R
G
= 10,
I
D
= 200mA
Turn-On Rise Time
t
r
— 7.28 —
Turn-Off Delay Time
t
D(off)
— 13.74 —
Turn-Off Fall Time
t
f
— 10.54 —
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
0
0.5
1.0
1.5
2.0
01 2 345
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
P1-P3P4-P6P7-P9P10-P10

DMC2400UV-13

Mfr. #:
Buy DMC2400UV-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET Comp Pair Enh FET 20Vds 0.58W 37pF
Lifecycle:
New from this manufacturer.
Delivery:
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