DMC2400UV-13

DMC2400UV
Document number: DS35537 Rev. 7 - 2
7 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-I , DRAIN SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
,D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V=2.5V
GS
-
V = -4.5V
GS
V=1.8V
GS
-
0.01 0.1 1 10
-I , DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE( )
DS(ON)
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
R
, D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance vs.Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-
R
ESIS
T
A
N
C
E ( )
DS(ON)
0
0.5
1.0
1.5
2.0
0
0.2
0.4
0.6
0.8
1.0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
J
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
I= 250A
D
I= 300A
D
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0
0.2
0.4
0.6
0.8
1.0
T= 25C
A
DMC2400UV
Document number: DS35537 Rev. 7 - 2
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www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
0
20
40
60
80
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0.1
10
100
1,000
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
1
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 22 Typical Drain-Source Leakage Current vs. Voltage
DS
04 8121620
T = 1
A
25 C
T = 8
A
5C
T = 2
A
5C
T = 1
A
50 C
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 23 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = -10V
I = -250mA
DS
D
0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 24 SOA, Safe Operation Area
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10s
W
µ
0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 25 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 275°C/W
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5
DMC2400UV
Document number: DS35537 Rev. 7 - 2
9 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT563
Dim Min Max Typ
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C1 1.7
C2 0.5
A
M
L
B
C
H
K
G
D
X
Z
Y
C1
C2
C2
G

DMC2400UV-13

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET Comp Pair Enh FET 20Vds 0.58W 37pF
Lifecycle:
New from this manufacturer.
Delivery:
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