DMC2400UV
Document number: DS35537 Rev. 7 - 2
7 of 10
www.diodes.com
June 2013
© Diodes Incorporated
DMC2400UV
NEW PRODUCT
ADVANCE INFORMATION
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-I , DRAIN SOURCE CURRENT
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
,D
AIN-S
U
CE
N-
ESISTANCE( )
DS(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V=2.5V
GS
-
V = -4.5V
GS
V=1.8V
GS
-
0.01 0.1 1 10
-I , DRAIN SOURCE CURRENT (A)
Fig. 16 Typical On-Resistance vs.
Drain Current and Temperature
D
, D
AIN-S
U
CE
N-
ESISTANCE( )
DS(ON)
T = 150°C
A
0.6
0.8
1.0
1.2
1.4
1.6
, D
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 17 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance vs.Temperature
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
0
0.5
1.0
1.5
2.0
0
0.2
0.4
0.6
0.8
1.0
-50-25 0255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
J
-V ,
A
E
ES
LD V
L
A
E (V)
GS(th)
I= 250A
D
I= 300A
D
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
SD
-I , S
E
EN
(A)
S
0
0.2
0.4
0.6
0.8
1.0
T= 25C
A