2002 Jun 21 2
NXP Semiconductors Product data sheet
Voltage regulator double diodes BZB984 series
FEATURES
• Total power dissipation: max. 425 mW
• Approx. 5% V
Z
tolerance
• Ultra small flat plastic SMD package
• Working voltage range nom. 2.4 to 15 V (E24 range).
APPLICATIONS
• General regulation functions
• ESD and surge protection.
DESCRIPTION
Low-power voltage regulator diodes in a SOT663 ultra
small plastic SMD package.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB984-C2V4 91 BZB984-C3V9 96 BZB984-C6V2 9B BZB984-C10 9G
BZB984-C2V7 92 BZB984-C4V3 97 BZB984-C6V8 9C BZB984-C11 9H
BZB984-C3V0 93 BZB984-C4V7 98 BZB984-C7V5 9D BZB984-C12 9J
BZB984-C3V3 94 BZB984-C5V1 99 BZB984-C8V2 9E BZB984-C13 9K
BZB984-C3V6 95 BZB984-C5V6 9A BZB984-C9V1 9F BZB984-C15 9L
PINNING
PIN DESCRIPTION
1 cathode 1
2 cathode 2
3 common anode
handbook, halfpage
MHC314
12
Top view
3
3
12
Fig.1 Simplified outline (SOT663) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 200 mA
I
ZSM
non-repetitive peak reverse
current
t
p
= 100 μs; square wave; T
amb
= 25 °C;
prior to surge
see Table 1
P
tot
total power dissipation T
amb
= 25 °C; 2 diodes loaded; note 1 − 425 mW
T
amb
= 25 °C; 1 diode loaded; note 1 − 265 mW
P
ZSM
non-repetitive peak reverse
dissipation
t
p
= 100 μs; square wave; T
amb
= 25 °C;
prior to surge
− 40 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
