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BZB984-C4V3,115

P1-P3P4-P6P7-P9P10-P10
2002 Jun 21 3
NXP Semiconductors Product data sheet
Voltage regulator double diodes BZB984 series
ELECTRICAL CHARACTERISTICS
Total BZB984-C series
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 10 mA; see Fig.2 0.9 V
I
R
reverse current
BZB984-C2V4 V
R
= 1 V 50 μA
BZB984-C2V7 V
R
= 1 V 20 μA
BZB984-C3V0 V
R
= 1 V 10 μA
BZB984-C3V3 V
R
= 1 V 5 μA
BZB984-C3V6 V
R
= 1 V 5 μA
BZB984-C3V9 V
R
= 1 V 3 μA
BZB984-C4V3 V
R
= 1 V 3 μA
BZB984-C4V7 V
R
= 2 V 3 μA
BZB984-C5V1 V
R
= 2 V 2 μA
BZB984-C5V6 V
R
= 2 V 1 μA
BZB984-C6V2 V
R
= 4 V 3 μA
BZB984-C6V8 V
R
= 4 V 2 μA
BZB984-C7V5 V
R
= 5 V 1 μA
BZB984-C8V2 V
R
= 5 V 700 nA
BZB984-C9V1 V
R
= 6 V 500 nA
BZB984-C10 V
R
= 7 V 200 nA
BZB984-C11 V
R
= 8 V 100 nA
BZB984-C12 V
R
= 8 V 100 nA
BZB984-C13 V
R
= 8 V 100 nA
BZB984-C15 V
R
= 10.5 V 50 nA
2002 Jun 21 4
NXP Semiconductors Product data sheet
Voltage regulator double diodes BZB984 series
Table 1 Per type BZB984-C2V4 to C15
T
j
= 25 °C unless otherwise specified.
BZB984-
Cxxx
WORKING VOLTAGE
V
Z
(V)
at
I
Z
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at
I
Ztest
= 5 mA
(see Figs 3 and 4)
DIODE CAP.
C
d
(pF)
at f
= 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100 μs;
T
amb
= 25 °C
Tol. ≈5% at I
Z
= 1 mA at I
Z
= 5 mA
MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2V4 2.2 2.6 275 600 70 100 −1.3 450 6.0
2V7 2.5 2.9 300 600 75 100 −1.4 450 6.0
3V0 2.8 3.2 325 600 80 95 −1.6 450 6.0
3V3 3.1 3.5 350 600 85 95 −1.8 450 6.0
3V6 3.4 3.8 375 600 85 90 −1.9 450 6.0
3V9 3.7 4.1 400 600 85 90 −1.9 450 6.0
4V3 4.0 4.6 410 600 80 90 −1.7 450 6.0
4V7 4.4 5.0 425 500 50 80 −1.2 300 6.0
5V1 4.8 5.4 400 480 40 60 −0.5 300 6.0
5V6 5.2 6.0 80 400 15 40 1.0 300 6.0
6V2 5.8 6.6 40 150 6 10 2.2 200 6.0
6V8 6.4 7.2 30 80 6 15 3.0 200 6.0
7V5 7.0 7.9 30 80 6 15 3.6 150 4.0
8V2 7.7 8.7 40 80 6 15 4.3 150 4.0
9V1 8.5 9.6 40 100 6 15 5.2 150 3.0
10 9.4 10.6 50 150 8 20 6.0 90 3.0
11 10.4 11.6 50 150 10 20 6.9 90 2.5
12 11.4 12.7 50 150 10 25 7.9 85 2.5
13 12.4 14.1 50 170 10 30 8.8 80 2.5
15 13.8 15.6 50 200 10 30 10.7 75 2.0
2002 Jun 21 5
NXP Semiconductors Product data sheet
Voltage regulator double diodes BZB984 series
THERMAL CHARACTERISTICS
Notes
1. Solder points on cathode tabs.
2. Device mounted on an FR4 printed-circuit board.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 2 diodes loaded; note 1 125 K/W
1 diode loaded; note 1 230 K/W
R
th j-a
thermal resistance from junction to ambient 2 diodes loaded; note 2 294 K/W
1 diode loaded; note 2 472 K/W
GRAPHICAL DATA
handbook, halfpage
0.6 0.7 0.8 1
V
F
(V)
I
F
(mA)
300
0
100
200
0.9
MLD362
Fig.2 Forward current as a function of forward
voltage; typical values.
T
j
= 25 °C.
handbook, halfpage
0.5
−2
10
−1
10
2
MLD363
1
I
Z
(mA)
S
Z
(mV/K)
10
−1.5
−1
−0.5
0
2V4
4V7
4V3
3V9
3V6
3V3
3V0
2V7
Fig.3 Temperature coefficient as a function of
working current; typical values.
BZB984-C2V4 to C4V7.
T
j
= 25 to 150 °C.
P1-P3P4-P6P7-P9P10-P10

BZB984-C4V3,115

Mfr. #:
Buy BZB984-C4V3,115
Manufacturer:
Nexperia
Description:
Zener Diodes DIODE ZENER 5 PCT
Lifecycle:
New from this manufacturer.
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