Automotive PSoC
®
4: PSoC 4200
Family Datasheet
Document Number: 001-93573 Rev. *E Page 13 of 37
Electrical Specifications
Absolute Maximum Ratings
Device-Level Specifications
All specifications are valid for –40 °C T
A
85 °C for A grade devices and -40 °C T
A
105 °C for S grade devices, except where
noted. Specifications are valid for 1.71 V to 5.5 V, except where noted.
Table 2. Absolute Maximum Ratings
[1]
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID1 V
DDD_ABS
Digital supply relative to Vssd –0.5 – 6 V Absolute max
SID2 V
CCD_ABS
Direct digital core voltage input relative
to Vssd
–0.5 – 1.95 V Absolute max
SID3 V
GPIO_ABS
GPIO voltage –0.5 – V
DD
+0.5 V Absolute max
SID4 I
GPIO_ABS
Maximum current per GPIO –25 – 25 mA Absolute max
SID5 I
GPIO_injection
GPIO injection current, Max for V
IH
>
V
DDD
, and Min for V
IL
< V
SS
–0.5 – 0.5 mA Absolute max,
current injected
per pin
BID44 ESD_HBM Electrostatic discharge human body
model
2200 – – V
BID45 ESD_CDM Electrostatic discharge charged device
model
500 – – V
BID46 LU Pin current for latch-up –200 – 200 mA
Note
1. Usage above the absolute maximum conditions listed in Tabl e 2 may cause permanent damage to the device. Exposure to absolute maximum conditions for extended
periods of time may affect device reliability. The maximum storage temperature is 150 °C in compliance with JEDEC Standard JESD22-A103, High Temperature
Storage Life. When used below absolute maximum conditions but above normal operating conditions, the device may not operate to specification.
Table 3. DC Specifications
Spec ID# Parameter Description Min Typ Max Units
Details/
Conditions
SID53 V
DD
Power supply input voltage
(V
DDA
= V
DDD
= V
DD
)
1.8 – 5.5 V With regulator
enabled
SID255 V
DDD
Power supply input voltage unregulated 1.71 1.8 1.89 V Internally unregu-
lated supply
SID54 V
CCD
Output voltage (for core logic) – 1.8 – V
SID55 C
EFC
External regulator voltage bypass 1 1.3 1.6 µF X5R ceramic or
better
SID56 C
EXC
Power supply decoupling capacitor – 1 – µF X5R ceramic or
better
Active Mode, V
DD
= 1.71 V to 5.5 V. Typical values measured at V
DD
= 3.3 V
SID9 I
DD4
Execute from Flash; CPU at 6 MHz – – 2.8 mA
SID10 I
DD5
Execute from Flash; CPU at 6 MHz – 2.2 – mA T = 25 °C
SID12 I
DD7
Execute from Flash; CPU at 12 MHz – – 4.2 mA
SID13 I
DD8
Execute from Flash; CPU at 12 MHz – 3.7 – mA T = 25 °C
SID16 I
DD11
Execute from Flash; CPU at 24 MHz – 6.7 – mA T = 25 °C
SID17 I
DD12
Execute from Flash; CPU at 24 MHz – – 7.2 mA
SID19 I
DD14
Execute from Flash; CPU at 48 MHz – 12.8 – mA T = 25 °C
SID20 I
DD15
Execute from Flash; CPU at 48 MHz – – 13.8 mA
Sleep Mode, V
DD
= 1.7 V to 5.5 V
SID25 I
DD20
I
2
C wakeup, WDT, and Comparators on.
6MHz
–1.31.8mAV
DD
= 1.71 V to
5.5 V
