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MJB5742T4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2011
June, 2011 − Rev. 2
1 Publication Order Number:
MJB5742/D
MJB5742T4G
NPN Silicon Power
Darlington Transistors
The Darlington transistors are designed for high−voltage power
switching in inductive circuits.
Features
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Small Engine Ignition
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO(sus)
400 Vdc
Collector−Emitter Voltage V
CEV
800 Vdc
Emitter−Base Voltage V
EB
8 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
I
CM
8
16
Adc
Base Current − Continuous
− Peak (Note 1)
I
B
I
BM
2.5
5
Adc
Total Device Dissipation @ T
A
= 25_C
Derate above 25°C
P
D
2
0.016
W
W/_C
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
100
0.8
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
POWER DARLINGTON
TRANSISTORS
8 AMPERES, 400 VOLTS
100 WATTS
http://onsemi.com
≈ 100 ≈ 50
MARKING
DIAGRAM
COLLECTOR 2,4
BASE
1
EMITTER 3
B5742G
AYWW
B5742 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
D
2
PAK
CASE 418B
STYLE 1
Device Package Shipping
†
ORDERING INFORMATION
MJB5742T4G D
2
PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MJB5742T4G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (I
C
= 50 mA, I
B
= 0) V
CEO(sus)
400 − − Vdc
Collector Cutoff Current (V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
I
CEV
−
−
−
−
1
5
mAdc
Emitter Cutoff Current (V
EB
= 8 Vdc, I
C
= 0) I
EBO
− − 75 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased I
S/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 5 Vdc)
(I
C
= 4 Adc, V
CE
= 5 Vdc)
h
FE
50
200
100
400
−
−
−
Collector−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc)
Collector−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.4 Adc)
Collector−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc, T
C
= 100_C)
V
CE(sat)
−
−
−
−
−
−
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc)
Base−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.4 Adc)
Base−Emitter Saturation Voltage (I
C
= 4 Adc, I
B
= 0.2 Adc, T
C
= 100_C)
V
BE(sat)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Diode Forward Voltage (Note 3) (I
F
= 5 Adc) V
f
− − 2.5 Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(V
CC
= 250 Vdc, I
C(pk)
= 6 A
I
B1
= I
B2
= 0.25 A, t
p
= 25 ms,
Duty Cycle v 1%)
t
d
− 0.04 −
ms
Rise Time t
r
− 0.5 −
ms
Storage Time t
s
− 8 −
ms
Fall Time t
f
− 2 −
ms
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(I
C(pk)
= 6 A, V
CE(pk)
= 250 Vdc
I
B1
= 0.06 A, V
BE(off)
= 5 Vdc)
t
sv
− 4 −
ms
Crossover Time t
c
− 2 −
ms
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (V
f
) of this diode is comparable to that of typical fast recovery rectifiers.
MJB5742T4G
http://onsemi.com
3
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
t
rv
I
C
V
CE
90% I
B1
t
sv
I
C(pk)
V
CE(pk)
90% V
CE(pk)
90% I
C
10% V
CE(pk)
10%
I
C(pk)
2% I
C
I
B
t
fi
t
ti
t
c
0.1
I
C
, COLLECTOR CURRENT (AMPS)
5
2000
h
FE
, DC CURRENT GAIN
V
CE
= 5 V
1
+25°C
210
1000
100
10
0
T
C
, CASE TEMPERATURE (°C)
0
40 120 160
60
POWER DERATING FACTOR (%)
SECOND BREAKDOWN DERATING
100
80
40
20
60 100 14080
THERMAL DERATING
Figure 1. Power Derating Figure 2. Inductive Switching Measurements
I
C
, COLLECTOR CURRENT (AMPS)
2.4
1.6
0.4
Figure 3. DC Current Gain
Figure 4. Base−Emitter Voltage
2
1.2
0.8
h
FE
= 20
0.2 1020.5 1 5
TIME
150°C
-55°C
20
2.2
1.4
1.8
1
0.6
+150°C
+25°C
-55°C
TYPICAL CHARACTERISTICS
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (AMPS)
1
0.2
0.1
1.4
0.8
1.2
105210.50.2
1.6
1.8
0.6
0.4
h
FE
= 20
+25°C
-55°C
+150°C
P1-P3P4-P6P7-P7

MJB5742T4G

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Manufacturer:
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Description:
Darlington Transistors BIP D2PAK XSTR TR
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