SQ2318AES
www.vishay.com
Vishay Siliconix
S13-2477-Rev. A, 09-Dec-13
1
Document Number: 62911
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
Marking Code: 8Y
FEATURES
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 40
R
DS(on)
() at V
GS
= 10 V 0.031
R
DS(on)
() at V
GS
= 4.5 V 0.036
I
D
(A) 8
Configuration Single
Top View
SOT-23 (TO-236)
1
G
2
S
D
3
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free and Halogen-free SQ2318AES-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
40
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
8
A
T
C
= 125 °C 4.6
Continuous Source Current (Diode Conduction) I
S
3.8
Pulsed Drain Current
a
I
DM
32
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
13
Single Pulse Avalanche Energy E
AS
8mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
3
W
T
C
= 125 °C 1
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
166
°C/W
Junction-to-Foot (Drain) R
thJF
50