SQ2318AES-T1_GE3

Mfr. #:: SQ2318AES-T1_GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET N-Channel 40V AEC-Q101 Qualified
Lifecycle:: New from this manufacturer.
Datasheet:: SQ2318AES-T1_GE3 Datasheet
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HTML Datasheet:: SQ2318AES-T1_GE3 Datasheet SQ2318AES-T1_GE3 Datasheet (P4-P6)SQ2318AES-T1_GE3 Datasheet (P7-P9)SQ2318AES-T1_GE3 Datasheet (P10-P11)
ECAD Model:
More Information:: SQ2318AES-T1_GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-23-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 8 A

Rds On - Drain-Source Resistance:: 31 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.5 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 8.7 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 3 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Tradename:: TrenchFET

Packaging:: Reel

Series:: SQ

Transistor Type:: 1 N-Channel

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 30 S

Fall Time:: 5.7 ns

Product Type:: MOSFET

Rise Time:: 8.4 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 12 ns

Typical Turn-On Delay Time:: 7.5 ns

Unit Weight:: 0.000282 oz

Tags: SQ2318AES, SQ2318AE, SQ2318A, SQ2318, SQ231, SQ23, SQ2

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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Vacuum Packaging with PL

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SQ2318AES-T1_GE3 Description

***ure Electronics: Single N-Channel 40 V 3 W 13 nC Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 40V 8A Automotive 3-Pin SOT-23 T/R

***ark: MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nsix Microsemi: Power Field-Effect Transistor, 8A I(D), 40V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

*** Source Electronics: Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R / MOSFET N-CH 60V 240MA SOT-23

***ure Electronics: 2N7002E Series N-Channel 60 V 3 Ohms Surface Mount Power Mosfet - SOT-23

***enic: 60V 240mA 3´Î@10V250mA 350mW 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ment14 APAC: N CHANNEL MOSFET, 60V, 240mA TO-236; Tra; N CHANNEL MOSFET, 60V, 240mA TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:240mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; No. of Pins:3

***ure Electronics: DMN65D8L: 60 V 3 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3

*** Source Electronics: MOSFET N-CH 60V 310MA SOT23 / Trans MOSFET N-CH 60V 0.31A 3-Pin SOT-23 T/R

***nell: MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 310mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 370mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***el Electronic: Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 115mA, 10V 310mA Ta -55°C~150°C TJ MOSFET N-CH 60V 310MA SOT23

***ical: Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R

***ronik: P-CHANNEL-FET 1,7A 60V SOT23 RoHSconf

***ark: P-Channel 60-V (D-S) 175C Mosfet

***S: French Electronic Distributor since 1988

***hard Electronics: P-Channel 60 V 0.94 Ohm 12 nC SMT Automotive Power Mosfet - SOT-23

***enic: 40V 4.1A 94m´Î@10V10A 3W 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ical: Trans MOSFET P-CH 40V 4.1A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:4.1A; Source Voltage Vds:40V; On Resistance

***ark: MOSFET, AEC-Q101, N-CH, -40, -4.1A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:-40V; Continuous Drain Current Id:-4.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2V RoHS Compliant: Yes

***nell: MOSFET, AUTO, P-CH, 60V, 2.3A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 4.1A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 94mohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

***eco: Transistor MOSFET N Channel 60 Volt 0.5 Amp 3 Pin SOT-23 Tape And Reel

***ure Electronics: N-Channel 60 V 5 Ohm Surface Mount Enhancement Mode Transistor-SOT-23-3

***ment14 APAC: MOSFET, N CH, 60V, 0.5A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Source Voltage Vds:60V; On Resistance

***ark: MOSFET, N CHANNEL, 60V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:800mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5.3 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300

***nell: MOSFET, N CH, 60V, 0.5A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: 2N7002 Series 60 V 7.5 Ohm SMT N-Channel Enhancement Mode Mosfet - SOT-23-3

***ical: Trans MOSFET N-CH 60V 0.21A Automotive 3-Pin SOT-23 T/R

*** Electronics: DIODES INC. - 2N7002-7-F - Power MOSFET, N Channel, 60 V, 115 mA, 13.5 ohm, SOT-23, Surface Mount

***ment14 APAC: MOSFET, N CH, 60V, 0.115A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Source Voltage Vds:60V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: N-Channel, Enh. Power dissipation: 0.3 W

***nell: MOSFET, N CH, 60V, 0.115A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 800mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

SQ2318AES-T1_GE3 More Information

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

Market price

Part #	Mfg.	Description	Stock	Price
SQ2318AES-T1-GE3 DISTI # V72:2272_14140847	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF	30	25:$0.3808 10:$0.4231 1:$0.5519
SQ2318AES-T1-GE3 DISTI # V36:1790_14140847	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF	0	3000000:$0.1473 1500000:$0.1474 300000:$0.1511 30000:$0.1561 3000:$0.1569
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1_GE3CT-ND	Vishay Siliconix	MOSFET N-CHAN 40V SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	60593In Stock	1000:$0.1986 500:$0.2570 100:$0.3270 10:$0.4380 1:$0.5100
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1_GE3DKR-ND	Vishay Siliconix	MOSFET N-CHAN 40V SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	60593In Stock	1000:$0.1986 500:$0.2570 100:$0.3270 10:$0.4380 1:$0.5100
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1_GE3TR-ND	Vishay Siliconix	MOSFET N-CHAN 40V SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	60000In Stock	30000:$0.1452 15000:$0.1531 6000:$0.1644 3000:$0.1758
SQ2318AES-T1-GE3 DISTI # 30606072	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSF	1200	46:$0.5500
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SQ2318AES-T1_GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	30000:$0.1379 18000:$0.1419 12000:$0.1459 6000:$0.1519 3000:$0.1569
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SQ2318AES-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1_GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R (Alt: SQ2318AES-T1_GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R (Alt: SQ2318AES-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1519 18000:€0.1629 12000:€0.1759 6000:€0.2049 3000:€0.3009
SQ2318AES-T1_GE3 DISTI # SQ2318AES-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 8A 3-Pin SOT-23 T/R (Alt: SQ2318AES-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1519 18000:€0.1629 12000:€0.1759 6000:€0.2049 3000:€0.3009
SQ2318AES-T1_GE3 DISTI # 96Y9637	Vishay Intertechnologies	MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:2.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	152303	1000:$0.2170 500:$0.2790 250:$0.3290 100:$0.3800 50:$0.4150 25:$0.4500 10:$0.4850 1:$0.5560
SQ2318AES-T1_GE3 DISTI # 76Y1610	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) 175C MOSFET	0	50000:$0.1400 30000:$0.1460 20000:$0.1570 10000:$0.1680 5000:$0.1820 1:$0.1860
SQ2318AES-T1_GE3 DISTI # 78-SQ2318AES-T1_GE3	Vishay Intertechnologies	MOSFET N-Channel 40V AEC-Q101 Qualified RoHS: Compliant	92877	1:$0.5100 10:$0.3890 100:$0.2890 500:$0.2370 1000:$0.1830 3000:$0.1670 6000:$0.1560 9000:$0.1450 24000:$0.1380
SQ2318AES-T1-GE3 DISTI # 78-SQ2318AES-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3 RoHS: Compliant	0
SQ2318AES-T1_GE3 DISTI # 1807398	Vishay Intertechnologies	AEQC101 QUALIFIED N-CHANNEL 40-V (D-S) 1, RL	2725	9000:£0.1110 6000:£0.1180 3000:£0.1270
SQ2318AES-T1_GE3 DISTI # 2617105	Vishay Intertechnologies	MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23 RoHS: Compliant	236768	1000:$0.3000 500:$0.3880 100:$0.4930 10:$0.6600 1:$0.7700
SQ2318AES-T1_GE3 DISTI # 2617105	Vishay Intertechnologies	MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23	157823	500:£0.2150 250:£0.2540 100:£0.2930 25:£0.3960 5:£0.4220
SQ2318AES-T1_GE3 DISTI # C1S803605048112	Vishay Intertechnologies	MOSFETs	1200	1000:$0.2110 500:$0.2270 100:$0.2810 50:$0.3070 10:$0.4400
SQ2318AES-T1-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SQ2318AES-T1_GE3 RoHS: Compliant	Americas -

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SQ2318AES-T1_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes