13
FN9052.2
November 15, 2004
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by the following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to
a load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
ISL6530 will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. The worst case
response time can be either at the application or removal of
load. Be sure to check both of these equations at the
minimum and maximum output levels for the worst case
response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q
1
turns on. Place the
small ceramic capacitors physically close to the MOSFETs
and between the drain of Q
1
and the source of Q
2
.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
The maximum RMS current required by the regulator may be
closely approximated through the following equation:
For a through-hole design, several electrolytic capacitors may
be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge currentrating. These capacitors
must be capable of handling the surge-current at power-up.
Some capacitor series available from reputable manufacturers
are surge current tested.
MOSFET Selection/Considerations
The ISL6530 requires two N-Channel power MOSFETs for
each PWM regulator. These should be selected based upon
r
DS(ON)
, gate supply requirements, and thermal management
requirements.
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss components;
conduction loss and switching loss. The conduction losses are
the largest component of power dissipation for both the upper
and the lower MOSFETs. These losses are distributed between
the two MOSFETs according to duty factor. The switching
losses seen when sourcing current will be different from the
switching losses seen when sinking current. The V
DDQ
regulator will only source current while the V
TT
regulator can
sink and source. When sourcing current, the upper MOSFET
realizes most of the switching losses. The lower switch realizes
most of the switching losses when the converter is sinking
current (see the equations below). These equations assume
linear voltage-current transitions and do not adequately model
power loss due the reverse-recovery of the upper and lower
MOSFET’s body diode. The gate-charge losses are dissipated
by the ISL6530 and don't heat the MOSFETs. However, large
gate-charge increases the switching interval, t
SW
which
increases the
MOSFET
switching losses.
I =
V
IN
- V
OUT
f
s
x L
V
OUT
V
IN
V
OUT
= I x ESR
x
t
RISE
=
L x I
TRAN
V
IN
- V
OUT
t
FALL
=
L x I
TRAN
V
OUT
I
RMS
MAX
V
OUT
V
IN
-------------- I
OUT
MAX
2
1
12
------
V
IN
V
OUT
Lf
s
-----------------------------
V
OUT
V
IN
--------------


2
+


=
P
LOWER
= Io
2
x r
DS(ON)
x (1 - D)
Where: D is the duty cycle = V
OUT
/ V
IN
,
t
SW
is the combined switch ON and OFF time, and
f
s
is the switching frequency.
LOSSES WHILE SOURCING CURRENT
LOSSES WHILE SINKING CURRENT
P
LOWER
Io
2
r
DS ON
1D
1
2
--- Io V
IN
t
SW
f
s
+=
P
UPPER
Io
2
r
DS ON
D
1
2
--- Io V
IN
t
SW
f
s
+=
P
UPPER
= Io
2
x r
DS(ON)
x D
ISL6530
14
FN9052.2
November 15, 2004
Ensure that both MOSFETs are within their maximum junction
temperature at high ambient temperature by calculating the
temperature rise according to package thermal-resistance
specifications. A separate heatsink may be necessary
depending upon MOSFET power, package type, ambient
temperature and air flow.
Given the reduced available gate bias voltage (5V), logic-
level or sub-logic-level transistors should be used for both N-
MOSFETs. Caution should be exercised when using devices
with very low gate thresholds (V
TH
). The shoot-through
protection circuitry may be circumvented by these
MOSFETs. Very high dv/dt transitions on the phase node
may cause the Miller capacitance to couple the lower gate
with the phase node and cause an undesireable turn on of
the lower MOSFET while the upper MOSFET is on.
Bootstrap Component Selection
External bootstrap components, a diode and capacitor, are
required to provide sufficient gate enhancement to the upper
MOSFET. The internal MOSFET gate driver is supplied by
the external bootstrap circuitry as shown in Figure 10. The
boot capacitor, C
BOOT
, develops a floating supply voltage
referenced to the PHASE pin. This supply is refreshed each
cycle, when D
BOOT
conducts, to a voltage of VCC less the
boot diode drop, V
D
, plus the voltage rise across Q
LOWER
.
Just after the PWM switching cycle begins and the charge
transfer from the bootstrap capacitor to the gate capacitance
is complete, the voltage on the bootstrap capacitor is at its
lowest point during the switching cycle. The charge lost on
the bootstrap capacitor will be equal to the charge
transferred to the equivalent gate-source capacitance of the
upper MOSFET as shown:
where Q
GATE
is the maximum total gate charge of the upper
MOSFET, C
BOOT
is the bootstrap capacitance, V
BOOT1
is
the bootstrap voltage immediately before turn-on, and
V
BOOT2
is the bootstrap voltage immediately after turn-on.
The bootstrap capacitor begins its refresh cycle when the
gate drive begins to turn-off the upper MOSFET. A refresh
cycle ends when the upper MOSFET is turned on again,
which varies depending on the switching frequency and
duty cycle.
The minimum bootstrap capacitance can be calculated by
rearranging the previous equation and solving for C
BOOT
.
Typical gate charge values for MOSFETs considered in
these types of applications range from 20 to 100nC. Since
the voltage drop across Q
LOWER
is negligible, V
BOOT1
is
simply VCC - V
D
. A Schottky diode is recommended to
minimize the voltage drop across the bootstrap capacitor
during the on-time of the upper MOSFET. Initial calculations
with V
BOOT2
no less than 4V will quickly help narrow the
bootstrap capacitor range.
For example, consider an upper MOSFET is chosen with a
maximum gate charge, Q
g
, of 100nC. Limiting the voltage
drop across the bootstrap capacitor to 1V results in a value
of no less than 0.1F. The tolerance of the ceramic capacitor
should also be considered when selecting the final bootstrap
capacitance value.
A fast recovery diode is recommended when selecting a
bootstrap diode to reduce the impact of reverse recovery
charge loss. Otherwise, the recovery charge, Q
RR
, would
have to be added to the gate charge of the MOSFET and
taken into consideration when calculating the minimum
bootstrap capacitance.
ISL6530
GND
LGATEn
UGATEn
PHASEn
BOOTn
V
IN
NOTE:
NOTE:
V
G-S
ª V
CC
C
BOOT
D
BOOT
Q
UPPER
Q
LOWER
+
-
FIGURE 10. UPPER GATE DRIVE BOOTSTRAP
V
G-S
ª V
CC
-V
D
+
V
D
-
VCC
Q
GATE
C
BOOT
V
BOOT1
V
BOOT2
=
C
BOOT
Q
GATE
V
BOOT1
V
BOOT2
-----------------------------------------------------
ISL6530
15
FN9052.2
November 15, 2004
ISL6530 DC-DC Converter Application Circuit
Figure 11 shows an application circuit for a DDR SDRAM
power supply, including V
DDQ
(+2.5V) and V
TT
(+1.25V).
Detailed information on the circuit, including a complete Bill-
of-Materials and circuit board description, can be found in
Application Note AN9993.
Component Selection Notes:
C4,5,7,8,9,10,18,19 - Each 150mF, Panasonic EEF-UE0J151R
D1,2 - Each 30mA Schottky Diode, MA732
L1,2 - Each 1mH Inductor, Panasonic P/N ETQ-P6F1ROSFA
Q1,2 - Each Fairchild MOSFET; ITF86130DK8
Q3 - Fairchild MOSFET; ITF86110DK8
FIGURE 11. DDR SDRAM VOLTAGE REGULATOR
BOOT1
R
21
+5V
UGATE1
PHASE1
PVCC1
LGATE1
BOOT2
UGATE2
PHASE2
LGATE2
PGND2
PGND1
COMP2 FB2 SENSE2
SENSE1
FB1
COMP1
OCSET/SD
PGOOD
VCC
GNDA
V2_SD
VREF_IN
VREF
R
19
C
18,19
L
2
C
7,8,9,10
L
1
Q
1
Q
2
Q
3
D
1
D
2
C
16
C
6
R
1
ISL6530
V
DDQ
V
TT
C
1
C
2
C
4,5
C
15
C
17
R
23
R
22
C
22
C
24
C
23
C
26
R
26
C
25
R
25
C
27
@5A
@10A
R
20
C
30
1000pF
3.48k
0.1F
C
3
1.0F
150F(x2)
0.1F
1H
150F(x4)
0.1F
1.0F
0.1F
1H
150F(x2)
68pF
3.01k
158
8.87k
2700pF
10000pF
1.43k
15000pF
100pF
5600pF
6.34k
3.01k
100
100pF
ISL6530

ISL6530CR-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
IC REG CTRLR INTEL 2OUT 32QFN
Lifecycle:
New from this manufacturer.
Delivery:
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