HCNR200 Datasheet HCNR201, HCNR201-550E, HCNR200-350E | P7-P9

Absolute Maximum Ratings

Storage Temperature ..............................................................................................‑55°C to +125°C

Operating Temperature (T

) ................................................................................. ‑55°C to +100°C

Junction Temperature (T

) ......................................................................................................... 125°C

Reow Temperature Prole ..............................................See Package Outline Drawings Section

Lead Solder Temperature ............................................................................................260°C for 10s

(up to seating plane)

Average Input Current ‑ I

........................................................................................................ 25 mA

Peak Input Current ‑ I

............................................................................................................... 40 mA

(50 ns maximum pulse width)

Reverse Input Voltage ‑ V

............................................................................................................2.5 V

= 100 µA, Pin 1‑2)

Input Power Dissipation .................................................................................... 60 mW @ T

= 85°C

(Derate at 2.2 mW/°C for operating temperatures above 85°C)

Reverse Output Photodiode Voltage ........................................................................................30 V

(Pin 6‑5)

Reverse Input Photodiode Voltage ............................................................................................30 V

(Pin 3‑4)

Recommended Operating Conditions

Storage Temperature .................................................................................................‑40°C to +85°C

Operating Temperature ............................................................................................‑40°C to +85°C

Average Input Current ‑ I

.................................................................................................. 1 ‑ 20 mA

Peak Input Current ‑ I

............................................................................................................... 35 mA

(50% duty cycle, 1 ms pulse width)

Reverse Output Photodiode Voltage ..................................................................................0 ‑ 15 V

(Pin 6‑5)

Reverse Input Photodiode Voltage ......................................................................................0 ‑ 15 V

(Pin 3‑4)

Electrical Specications

= 25°C unless otherwise specied.

Parameter Symbol Device Min. Typ. Max. Units Test Conditions Fig. Note

Transfer Gain K

HCNR200 0.85 1.00 1.15 5 nA < I

< 50 µA, 2,3 1

0 V < V

< 15 V

HCNR201 0.95 1.00 1.05 5 nA < I

< 50 µA, 1

0 V < V

< 15 V

HCNR201 0.93 1.00 1.07 ‑40°C < T

< 85°C, 1

5 nA < I

< 50 µA,

0 V < V

< 15 V

Temperature ∆K

/∆T

‑65 ppm/°C ‑40°C < T

< 85°C, 2,3

Coecient of 5 nA < I

< 50 µA,

Transfer Gain 0 V < V

< 15 V

DC NonLinearity NL

HCNR200 0.01 0.25 % 5 nA < I

< 50 µA, 4,5, 2

(Best Fit) 0 V < V

< 15 V 6

HCNR201 0.01 0.05 5 nA < I

< 50 µA, 2

0 V < V

< 15 V

HCNR201 0.01 0.07 ‑40°C < T

< 85°C, 2

5 nA < I

< 50 µA,

0 V < V

< 15 V

DC Nonlinearity NL

0.016 5 nA < I

< 50 µA, 3

(Ends Fit) % 0 V < V

< 15 V

Input Photo‑ K

HCNR200 0.25 0.50 0.75 % I

= 10 mA, 7

diode Current 0 V < V

PD1

< 15 V

Transfer Ratio HCNR201 0.36 0.48 0.72

PD1

)

Temperature ∆K

/∆T

‑0.3 %/°C ‑40°C < T

< 85°C, 7

Coecient I

= 10 mA

of K

0 V < V

PD1

< 15 V

Photodiode I

0.5 25 nA I

= 0 mA, 8

Leakage Current 0 V < V

< 15 V

Photodiode BV

RPD

30 150 V I

= 100 µA

Reverse Break‑

down Voltage

Photodiode C

22 pF V

= 0 V

Capacitance

LED Forward V

1.3 1.6 1.85 V I

= 10 mA 9,

Voltage 10

1.2 1.6 1.95 I

= 10 mA,

‑40°C < T

< 85°C

LED Reverse BV

2.5 9 V I

= 100 µA

Breakdown

Voltage

Temperature ∆V

/∆T

‑1.7 mV/°C I

= 10 mA

Coecient of

Forward Voltage

LED Junction C

LED

80 pF f = 1 MHz,

Capacitance V

= 0 V

AC Electrical Specications

= 25°C unless otherwise specied.

Test

Parameter Symbol Device Min. Typ. Max. Units Conditions Fig. Note

LED Bandwidth f ‑3dB 9 MHz I

= 10 mA

Application Circuit Bandwidth:

High Speed 1.5 MHz 16 6

High Precision 10 kHz 17 6

Application Circuit: IMRR

High Speed 95 dB freq = 60 Hz 16 6, 7

Notes:

1. K

is calculated from the slope of the best t line of I

PD2

vs. I

PD1

with eleven equally distributed data points from 5 nA to 50 µA. This is approxi‑

mately equal to I

PD2

PD1

at I

= 10 mA.

2. BEST FIT DC NONLINEARITY (NL

) is the maximum deviation expressed as a percentage of the full scale output of a “best t” straight line from

a graph of I

PD2

vs. I

PD1

with eleven equally distrib uted data points from 5 nA to 50 µA. I

PD2

error to best t line is the deviation below and above

the best t line, expressed as a percentage of the full scale output.

3. ENDS FIT DC NONLINEARITY (NL

) is the maximum deviation expressed as a percentage of full scale output of a straight line from the 5 nA to

the 50 µA data point on the graph of I

PD2

vs. I

PD1

4. Device considered a two‑terminal device: Pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together.

5. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage of ≥6000 V rms for ≥1 second (leakage

detection current limit, I

I‑O

of 5 µA max.). This test is performed before the 100% production test for partial discharge (method b) shown in the

IEC/EN/DIN EN 60747‑5‑2 Insulation Characteris‑tics Table (for Option #050 only).

6. Specic performance will depend on circuit topology and components.

7. IMRR is dened as the ratio of the signal gain (with signal applied to V

of Figure 16) to the isolation mode gain (with V

connected to input

common and the signal applied between the input and output commons) at 60 Hz, expressed in dB.

Package Characteristics

= 25°C unless otherwise specied.

Test

Parameter Symbol Device Min. Typ. Max. Units Conditions Fig. Note

Input‑Output V

ISO

5000 V rms RH ≤50%, 4, 5

Momentary‑Withstand t = 1 min.

Voltage*

Resistance R

I‑O

Ω V

= 500 VDC 4

(Input‑Output)

= 100°C, 4

= 500 VDC

Capacitance C

I‑O

0.4 0.6 pF f = 1 MHz 4

(Input‑Output)

*The Input‑Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input‑output continuous

voltage rating. For the continuous voltage rating refer to the VDE 0884 Insulation Characteristics Table (if applicable), your equipment level safety

specication, or Application Note 1074, “Optocoupler Input‑Output Endurance Voltage.”

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

HCNR200

Mfr. #:

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Manufacturer:

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Description:

High Linearity Optocouplers 1 Ch 60mW 25mA

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HCNR200

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