HEXFET
®
Power MOSFET
PD -95199
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
11/9/04
Description
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
SO-8
V
DSS
= 55V
R
DS(on)
= 0.050Ω
IRF7341PbF
www.irf.com 1
Parameter Max. Units
V
DS
Drain- Source Voltage 55 V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 4.7
I
D
@ T
C
= 70°C Continuous Drain Current, V
GS
@ 10V 3.8 A
I
DM
Pulsed Drain Current 38
P
D
@T
C
= 25°C Power Dissipation 2.0
P
D
@T
C
= 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
V
GSM
Gate-to-Source Voltage Single Pulse tp<10µs 30 V
E
AS
Single Pulse Avalanche Energy 72
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 62.5 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
