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IRF7341PBF

P1-P3P4-P6P7-P7
IRF7341PbF
4 www.irf.com
0 10 20 30 40
0.040
0.060
0.080
0.100
0.120
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 10V
VGS = 4.5V
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
(Ω)
R
DS(on)
, D
ra
in
-to
-S
o
u
rc
e
O
n
R
e
s
is
ta
n
c
e
( Ω )
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
4.7A
25 50 75 100 125 150
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
2.1A
3.8A
4.7A
0.04
0.06
0.08
0.10
0.12
0246810
A
GS
V , Gate-to-Source Voltage (V)
I = 4.7A
D
IRF7341PbF
www.irf.com 5
1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
4.5A
V = 12V
DS
V = 30V
DS
V = 48V
DS
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7341PbF
6 www.irf.com
θ
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MI N MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L
8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR INT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
NOT ES :
1. DIME NS IONING & T OLE RANCING PE R AS ME Y14.5M-1994.
2. CONTR OLLING DIMENS ION: MILL IME T ER
3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
5 DIME NS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .
6 DIME NS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .
MOLD PR OT RUS IONS NOT T O EXCEE D 0.25 [.010].
7 DIMENSION IS T HE LENGT H OF LEAD FOR S OLDERING TO
A SUBS T RAT E.
MOLD PR OT RUS IONS NOT T O EXCEE D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INT ERNATIONAL
RECTIFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S I GNAT E S L E AD- F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
P1-P3P4-P6P7-P7

IRF7341PBF

Mfr. #:
Buy IRF7341PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS
Lifecycle:
New from this manufacturer.
Delivery:
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