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PBSS304PD,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 9 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa739
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
006aaa740
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aaa741
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aaa742
10
10
−1
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 10 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
8. Test information
Fig 14. BISS transistor switching time definition
V
CC
= −9.2 V; I
C
= −2 A; I
Bon
= −0.1 A; I
Boff
= 0.1 A
Fig 15. Test circuit for switching times
006aaa266
−
I
Bon
(100 %)
−
I
B
input pulse
(idealized waveform)
−
I
Boff
90 %
10 %
−
I
C
(100 %)
−
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 11 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 16. Package outline SOT457 (SC-74)
04-11-08Dimensions in mm
3.0
2.5
1.7
1.3
3.1
2.7
pin 1 index
1.9
0.26
0.10
0.40
0.25
0.95
1.1
0.9
0.6
0.2
132
4
56
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PBSS304PD SOT457 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS304PD,115

Mfr. #:
Buy PBSS304PD,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 80V 3A SC-74
Lifecycle:
New from this manufacturer.
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