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PBSS304PD,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 6 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa273
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa751
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 7 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-basecut-off
current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
= 150 °C
--−50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −64 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −500 mA 155 225 -
V
CE
= −2 V; I
C
= −1A
[1]
140 200 -
V
CE
= −2 V; I
C
= −2A
[1]
105 145 -
V
CE
= −2 V; I
C
= −3A
[1]
60 85 -
V
CE
= −2 V; I
C
= −4A
[1]
30 45 -
V
CE
= −2 V; I
C
= −5A
[1]
20 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −55 −75 mV
I
C
= −1 A; I
B
= −50 mA - −110 −145 mV
I
C
= −2 A; I
B
= −200 mA
[1]
- −150 −200 mV
I
C
= −3 A; I
B
= −150 mA
[1]
- −315 −415 mV
I
C
= −3 A; I
B
= −300 mA
[1]
- −215 −290 mV
I
C
= −4 A; I
B
= −400 mA
[1]
- −295 −390 mV
I
C
= −5 A; I
B
= −500 mA
[1]
- −410 −540 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2 A; I
B
= −200 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −0.78 −0.87 V
I
C
= −1 A; I
B
= −50 mA - −0.80 −0.89 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −0.83 −0.91 V
I
C
= −3 A; I
B
= −150 mA
[1]
- −0.92 −0.99 V
I
C
= −3 A; I
B
= −300 mA
[1]
- −0.94 −1.01 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2 V; I
C
= −2A - −0.80 −1.00 V
t
d
delay time V
CC
= −9.2 V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
= 0.1 A
-13-ns
t
r
rise time - 77 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 210 - ns
t
f
fall time - 102 - ns
t
off
turn-off time - 312 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f = 100 MHz
- 110 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-45-pF
PBSS304PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 March 2009 8 of 15
NXP Semiconductors
PBSS304PD
80 V, 3 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
006aaa735
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
−68
V
CE
(V)
0 −2.0−1.6−0.8 −1.2−0.4
006aaa736
−2
−4
−6
I
C
(A)
0
−306
−272
−238
I
B
= −340 mA
−204
−170
−136
−102
−34
006aaa737
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa738
−0.4
−0.8
−1.2
V
BEsat
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PBSS304PD,115

Mfr. #:
Buy PBSS304PD,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP 80V 3A SC-74
Lifecycle:
New from this manufacturer.
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