2002 May 06 2
NXP Semiconductors Product data sheet
Low V
F
MEGA Schottky barrier diode
PMEG3002AEB
FEATURES
• Forward current: 0.2 A
• Reverse voltage: 30 V
• Very low forward voltage
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• High efficiency DC/DC conversion
• Voltage clamping
• Inverse-polarity protection
• Low voltage rectification
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small SMD plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
columns
12
MGU328
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
Marking code: B1.
The marking bar indicates the cathode.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 30 V
I
F
continuous forward current − 200 mA
I
FRM
repetitive peak forward current t
p
≤ 1 s; δ ≤ 0.5 − 300 mA
I
FSM
non-repetitive peak forward current t
p
= 8.3 ms half sinewave;
JEDEC method
− 1 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 125 °C
T
amb
operating ambient temperature −65 +125 °C
