2002 May 06 3
NXP Semiconductors Product data sheet
Low V
F
MEGA Schottky barrier diode
PMEG3002AEB
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
continuous forward voltage see Fig.2
I
F
= 0.1 mA 130 190 mV
I
F
= 1 mA 190 250 mV
I
F
= 10 mA 255 300 mV
I
F
= 100 mA 355 400 mV
I
F
= 200 mA 420 480 mV
I
R
continuous reverse current V
R
= 10 V; see Fig.3; note 1 2.5 10 μA
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; see Fig.4 20 25 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 450 K/W