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SI4599DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15
Vishay Siliconix
Si4599DY
New Product
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
FEATURES
• Halogen-free
• TrenchFET
®
Power MOSFET
• 100 % R
g
Tested
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge Converter
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)
I
D
(A)
a
Q
g
(Typ.)
N-Channel 40
0.0355 at V
GS
= 10 V
6.8
5.3
0.0425 at V
GS
= 4.5 V
6.2
P-Channel - 40
0.045 at V
GS
= - 10 V
- 5.8
11.8
0.062 at V
GS
= - 4.5 V
- 5.0
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4599DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
V
DS
40 - 40
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
6.8 - 5.8
A
T
C
= 70 °C
5.4 - 4.7
T
A
= 25 °C
5.6
b, c
- 4.7
b, c
T
A
= 70 °C
4.4
b, c
- 3.7
b, c
Pulsed Drain Current
I
DM
20 - 20
Source-Drain Current Diode Current
T
C
= 25 °C
I
S
2.5 - 2.5
T
A
= 25 °C
1.6
b, c
- 1.6
b, c
Pulsed Source-Drain Current
I
SM
20 - 20
Single Pulse Avalanche Current
L = 0 1 mH
I
AS
7- 10
Single Pulse Avalanche Energy
E
AS
2.45 5 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
3.0 3.1
W
T
C
= 70 °C
1.9 2
T
A
= 25 °C
2.0
b, c
2.0
b, c
T
A
= 70 °C
1.25
b, c
1.25
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, d
t ≤ 10 s
R
thJA
54 64 49 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
33 42 30 40
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
Vishay Siliconix
Si4599DY
New Product
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 40
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 40
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 µA
N-Ch 44
mV/°C
I
D
= - 250 µA
P-Ch - 42
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 5.5
II
D
= - 250 µA
P-Ch 4.6
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 1.4 3.0
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 1.2 - 2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch 100
nA
P-Ch - 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 40 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
N-Ch 10
A
V
DS
= - 5 V, V
GS
= - 10 V
P-Ch - 10
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 5 A
N-Ch 0.0295 0.0355
Ω
V
GS
= - 10 V, I
D
= - 5 A
P-Ch 0.037 0.045
V
GS
= 4.5 V, I
D
= 4 A
N-Ch 0.0355 0.0425
V
GS
= - 4.5 V, I
D
= - 4 A
P-Ch 0.050 0.062
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 5 A
N-Ch 22
S
V
DS
= - 15 V, I
D
= - 5 A
P-Ch 14
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
N-Ch 640
pF
P-Ch 970
Output Capacitance
C
oss
N-Ch 73
P-Ch 120
Reverse Transfer Capacitance
C
rss
N-Ch 41
P-Ch 95
Total Gate Charge
Q
g
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
N-Ch 11.7 20
nC
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 5 A
P-Ch 25 38
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V I
D
= 5 A
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 5 A
N-Ch 5.3 9
P-Ch 11.8 18
Gate-Source Charge
Q
gs
N-Ch 1.9
P-Ch 3.0
Gate-Drain Charge
Q
gd
N-Ch 1.7
P-Ch 5.2
Gate Resistance
R
g
f = 1 MHz
N-Ch 0.5 2.2 4.5
Ω
P-Ch 1.0 5.5 11
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
3
Vishay Siliconix
Si4599DY
New Product
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Dynamic
a
Tu r n - On D e l ay T i m e
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 4 Ω
I
D
≅ 5 A, V
GEN
= 10 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 4 Ω
I
D
≅ - 5 A, V
GEN
= - 10 V, R
g
= 1 Ω
N-Ch 7 14
ns
P-Ch 7 14
Rise Time
t
r
N-Ch 10 20
P-Ch 12 24
Turn-Off Delay Time
t
d(off)
N-Ch 15 30
P-Ch 30 60
Fall Time
t
f
N-Ch 9 18
P-Ch 9 18
Tu r n - On D e l a y T i m e
t
d(on)
N-Channel
V
DD
= 20 V, R
L
= 4 Ω
I
D
≅ 5 A, V
GEN
= 4.5 V, R
g
= 1 Ω
P-Channel
V
DD
= - 20 V, R
L
= 4 Ω
I
D
≅ - 5 A, V
GEN
= - 4.5 V, R
g
= 1 Ω
N-Ch 16 30
P-Ch 44 80
Rise Time
t
r
N-Ch 17 30
P-Ch 33 50
Turn-Off Delay Time
t
d(off)
N-Ch 16 30
P-Ch 28 60
Fall Time
t
f
N-Ch 10 20
P-Ch 13 25
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
N-Ch 2.5
A
P-Ch - 2.5
Pulse Diode Forward Current
a
I
SM
N-Ch 20
P-Ch - 20
Body Diode Voltage
V
SD
I
S
= 1.6 A
N-Ch 0.78 1.2
V
I
S
= - 1.6 A
P-Ch - 0.76 - 1.2
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 2 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch 19 30
ns
P-Ch 26 50
Body Diode Reverse Recovery Charge
Q
rr
N-Ch 14 25
nC
P-Ch 18.5 35
Reverse Recovery Fall Time
t
a
N-Ch 13
ns
P-Ch 12.5
Reverse Recovery Rise Time
t
b
N-Ch 6
P-Ch 13.5
P1-P3P4-P6P7-P9P10-P12P13-P15

SI4599DY-T1-GE3

Mfr. #:
Buy SI4599DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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