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SI4599DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15
www.vishay.com
4
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
Vishay Siliconix
Si4599DY
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=10thru 5 V
3 V
4 V
0.020
0.028
0.036
0.044
0.052
0.060
061218 24 30
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=10V
0
2
4
6
8
10
0.0 2.5 5.0 7.5 10.0 12.5
I
D
=5A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
=10V
V
DS
=20V
V
DS
=30V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
012345
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
T
C
=25 °C
T
C
= - 55 °C
T
C
= 125 °C
C
rss
0
160
320
480
640
800
0 6 12 18 24 30
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
I
D
=5A
V
GS
=10V
V
GS
=4.5V
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
www.vishay.com
5
Vishay Siliconix
Si4599DY
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.04
0.08
0.12
0.16
0.20
02468 10
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
A
= 25 °C
T
A
= 125 °C
I
D
=5A
0
32
4
8
64
80
011100.00.01
Time (s)
Power (W)
0.1
16
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which r
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
1ms
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
DC
1s
10 s
Limited byR
DS(on)
*
10 ms
100 ms
www.vishay.com
6
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
Vishay Siliconix
Si4599DY
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
5
6
8
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
4
Power Derating, Junction-to-Foot
0
0.8
1.6
2.4
3.2
4.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
P1-P3P4-P6P7-P9P10-P12P13-P15

SI4599DY-T1-GE3

Mfr. #:
Buy SI4599DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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