1
Features
Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
Access Time – 70 ns
Sector Erase Architecture
Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Suspend/Resume Feature for Erase and Program
Supports Reading and Programming from Any Sector by Suspending Erase of a
Different Sector
Supports Reading Any Byte/Word by Suspending Programming of Any Other
Byte/Word
Low-power Operation
–30 mA Active
10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV16X(T) is a 3.0-volt 16-megabit Flash memory organized as 1,048,576
words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0
- I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for
erase operations. The device is offered in a 48-lead TSOP, 45-ball and 48-ball CBGA
packages. The device has CE
and OE control signals to avoid any bus contention.
This device can be read or reprogrammed using a single 2.65V power supply, making
it ideally suited for in-system programming.
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV160
AT49LV160
AT49BV160T
AT49BV161
AT49LV161
AT49BV161T
AT49LV161T
Pin Configurations
Pin Name Function
A0 - A19 Addresses
CE
Chip Enable
OE Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY READY/BUSY Output
VPP Write Protection and Power Supply for Accelerated Program/Erase
Operations
I/O0 - I/O14 Data Inputs/Outputs
I/O15 (A-1) I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
BYTE Selects Byte or Word Mode
NC No Connect
VCCQ Output Power Supply
Rev. 1427L–FLASH–02/03
2
AT49BV/LV160(T)/161(T)
1427L–FLASH–02/03
AT49BV/LV160(T)
CBGA Top View
A
B
C
D
E
F
1
234567
A13
A14
A15
A16
VCCQ
GND
A11
A10
A12
I/O14
I/O15
I/O7
A8
WE
A9
I/O5
I/O6
I/O13
VPP
RST
I/O11
I/O12
I/O4
A18
I/O2
I/O3
VCC
A19
A17
A6
I/O8
I/O9
I/O10
A7
A5
A3
CE
I/O0
I/O1
A4
A2
A1
A0
GND
OE
8
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
CBGA Top View
RDY/BUSY
NC
A18
NC
I/O2
I/O10
I/O11
I/O3
A3
A4
A2
A1
A0
CE
OE
VSS
A7
A17
A6
A5
I/O0
I/O8
I/O9
I/O1
WE
RESET
VPP
A19
I/O5
I/O12
VCC
I/O4
A9
A8
A10
A11
I/O7
I/O14
I/O13
I/O6
A13
A12
A14
A15
A16
BYTE
I/O15
VSS
A
B
C
D
E
F
G
H
1
23456
/A-1
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
VPP
NC
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
AT49BV/LV161(T)
3
AT49BV/LV160(T)/161(T)
1427L–FLASH–02/03
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector. (See “Sector Lockdown” section.)
To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend
feature. This feature will put the Erase or Program on hold for any amount of time and let the
user read data from or program data to any of the remaining sectors within the memory. The
end of a program or an erase cycle is detected by the Ready/Busy
pin, Data Polling or by the
toggle bit.
The VPP pin provides data protection and faster programming. When the V
PP
input is below
0.8V, the program and erase functions are inhibited. When V
PP
is at 1.65V or above, normal
program and erase operations can be performed. With V
PP
at 5.0V or 12.0V, the program and
erase operations are accelerated.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering
down the device, or by pulsing the RESET
pin low for a minimum of 500 ns and then bringing
it back to V
CC
. Erase, Erase Suspend/Resume, and Program Suspend/Resume commands
will not work while in this mode; if entered they will result in data being programmed into the
device. It is not recommended that the six-byte code reside in the software of the final product
but only exist in external programming code.
When using the AT49BV/LV160(T) pinout configuration, the device always operates in the
word mode. In the AT49BV/LV161(T) configuration, the BYTE
pin controls whether the device
data I/O pins operate in the byte or word configuration. If the BYTE
pin is set at logic “1”, the
device is in word configuration, I/O0 - I/O15 are active and controlled by CE
and OE.
If the BYTE
pin is set at logic “0”, the device is in byte configuration, and only data I/O pins
I/O0 - I/O7 are active and controlled by CE
and OE. The data I/O pins I/O8 - I/O14 are tri-
stated, and the I/O15 pin is used as an input for the LSB (A-1) address function.

AT49BV161-70TI

Mfr. #:
Manufacturer:
Description:
IC FLASH 16M PARALLEL 48TSOP
Lifecycle:
New from this manufacturer.
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