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PMBT4403,215

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -40 V
V
CEO
collector-emitter voltage open base - -40 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -600 mA
I
CM
peak collector current - -800 mA
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -200 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
T
amb
(°C)
-75 17512525 75-25
aaa-014677
100
200
300
P
tot
(mW)
0
(1)
(1) FR4 PCB; standard footprint
Fig. 1. Power derating curve
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 500 K/W
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 4 / 14
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
aaa-014478
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
Mounted on FR4 PCB; standard footprint.
Fig. 2. Transient thermal impedance as a function of pulse time; typical values
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 5 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= -40 V; I
E
= 0 A; T
amb
= 25 °C - - -50 nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -50 nA
V
CE
= -1 V; I
C
= -0.1 mA; T
amb
= 25 °C 30 - -
V
CE
= -1 V; I
C
= -1 mA; T
amb
= 25 °C 60 - -
V
CE
= -1 V; I
C
= -10 mA; T
amb
= 25 °C 100 - -
V
CE
= -2 V; I
C
= -150 mA; T
amb
= 25 °C 100 - 300
h
FE
DC current gain
V
CE
= -2 V; I
C
= -500 mA; T
amb
= 25 °C 20 - -
I
C
= -150 mA; I
B
= -15 mA;
T
amb
= 25 °C
- - -400 mVV
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
- - -750 mV
I
C
= -150 mA; I
B
= -15 mA;
T
amb
= 25 °C
- - -950 mVV
BEsat
base-emitter saturation
voltage
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
- - -1.3 V
t
d
delay time - - 15 ns
t
r
rise time - - 30 ns
t
on
turn-on time - - 40 ns
t
s
storage time - - 300 ns
t
f
fall time - - 50 ns
t
off
turn-off time
I
C
= -150 mA; I
Bon
= -15 mA;
I
Boff
= 15 mA; T
amb
= 25 °C
- - 350 ns
C
C
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 8.5 pF
C
E
emitter capacitance V
EB
= -500 mV; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- - 35 pF
f
T
transition frequency V
CE
= -10 V; I
C
= -20 mA; f = 100 MHz;
T
amb
= 25 °C
200 - - MHz
P1-P3P4-P6P7-P9P10-P12P13-P15

PMBT4403,215

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Manufacturer:
Nexperia
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Bipolar Transistors - BJT PNP SW 600MA 40V
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