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PMBT4403,215

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 6 / 14
aaa-014458
200
400
600
h
FE
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
V
CE
= -2 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -2-1.5-0.5 -1
aaa-014459
-0.4
-
0
.6
-0.2
-0.8
-1
I
C
(A)
0
I
B
= -23 mA
-20.7
-18.4
-16.1
-13.8
-11.5
-9.2
-6.9
-4.6
-2.3
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
aaa-014475
-0.4
-0.8
-1.2
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
V
CE
= -2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
aaa-014476
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 7 / 14
aaa-014477
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(3)
(2)
I
C
/I
B
= 20
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 7. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-014860
-10
-1
-10
-2
-1
V
CEsat
(V)
-10
-3
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
NXP Semiconductors
PMBT4403
40 V, 600 mA, PNP switching transistor
PMBT4403 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 5 March 2015 8 / 14
11. Test information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 9. BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 10. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P12P13-P15

PMBT4403,215

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP SW 600MA 40V
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New from this manufacturer.
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