GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise,
Distributed Amplifier, 2 GHz to 18 GHz
Data Sheet
HMC606LC5
Rev. F Document Feedback
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FEATURES
Ultralow phase noise: −160 dBc/Hz typical at 10 kHz
Output power for 1 dB compression (P1dB): 15 dBm typical
at 2 GHz to 12 GHz frequency range
Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range
Output third-order intercept (IP3): 27 dBm typical at 2 GHz to
12 GHz frequency range
Supply voltage: 5.0 V at 64 mA typical
50 Ω matched input/output
32-terminal, ceramic, leadless chip carrier (LCC)
APPLICATIONS
Radars, electronic warfare (EW), and electronic counter
measures (ECMs)
Microwave radios
Test instrumentation
Military and space
Fiber optic systems
FUNCTIONAL BLOCK DIAGRAM
17
1
3
4
2
9
NC
V
CC
1
NC
GND
5
6
RFIN
GND
7
NC
8
NC
NC
18
NC
19
NC
20
GND
21 RFOUT
22 GND
23
NC
24
NC
NC
12
NC
11
NC
10
NC
13NC
14NC
15
NC
16
V
CC
2
25
NC
26 NC
27
NC
28 NC
29
NC
30 NC
31 NC
32
NC
HMC606LC5
GND
PACKAGE
BASE
14968-001
Figure 1.
GENERAL DESCRIPTION
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium
phosphide (InGaP), heterojunction bipolar transistor (HBT),
monolithic microwave integrated circuit (MMIC) distributed
amplifier housed in a 32-terminal, ceramic, leadless chip carrier
(LCC) package that operates from 2 GHz to 18 GHz. With an
input signal of 12 GHz, the amplifier provides ultralow phase noise
performance of −160 dBc/Hz at a 10 kHz offset, representing a
significant improvement over field effect transistor (FET)-based
distributed amplifiers. The HMC606LC5 provides 13.5 dB of
small signal gain, 27 dBm output IP3, and 15 dBm of output
power for 1 dB compression while requiring 64 mA from a 5.0 V
supply. The input and output of the HMC606LC5 amplifier are
internally matched to 50 Ω and are internally dc blocked.
