www.vishay.com Document Number: 91234
4 S09-1284-Rev. B, 13-Jul-09
IRFP460A, SiHFP460A
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91234_05
10
2
10
3
1
10
10
2
10
1
10
5
10
4
10
3
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
20
100
8060
40
I
D
= 20 A
V
DS
= 100 V
V
DS
= 250 V
For test circuit
see figure 13
V
DS
= 400 V
91234_06
10
2
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.2
1.0
0.80.60.4
25 °C
150 °C
V
GS
= 0 V
91234_07
10
1
0.1
1.2 1.4 1.6
10
µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
3
10
10
10
2
10
2
10
3
10
4
91234_08