VUO98-12NO7 Datasheet VUO98-12NO7 | P1-P3

VUO98-12NO7

3~ Rectifier Bridge

Standard Rectifier Module

~

K10

EG 1

~

L9

~

A1

PS 18

Part number

VUO98-12NO7

Features / Advantages: Applications: Package:

● Package with DCB ceramic

● Improved temperature and power cycling

● Planar passivated chips

● Very low forward voltage drop

● Very low leakage current

● Diode for main rectification

● For three phase bridge configurations

● Supplies for DC power equipment

● Input rectifiers for PWM inverter

● Battery DC power supplies

● Field supply for DC motors

ECO-PAC2

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 9 mm

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

RRM

1200

I105

FSM

750

DAV

V

=

V

A

=

I

3~

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130327aData according to IEC 60747and per semiconductor unless otherwise specified

VUO98-12NO7

V = V

kA²s

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.14

R 0.7 K/W

R

min.

105

V

RSM

V

100T = 25°C

VJ

T = °C

VJ

mA1.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

115

P

tot

175 WT = 25°C

C

R K/W0.3

40

1200

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.48

T = 25°C

VJ

150

V

F0

V0.81T = °C

VJ

150

r

F

5.9

mΩ

V1.06T = °C

VJ

I = A

F

V

40

1.51

I = A

F

120

I = A

F

120

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

RRM

V1200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

11

j

unction capacitance

V = V;400 T = 25°Cf = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T = °C

VJ

150

750

810

2.05

1.98

A

640

690

2.82

2.73

1200

DAV

d =rectangular ⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

1300

IXYS reserves the right to change limits, conditions and dimensions.

20130327aData according to IEC 60747and per semiconductor unless otherwise specified

VUO98-12NO7

Ratings

XXX XX-XXXXX

YYCW Lot#

Made in Germany

Circuit Diagram

Product number Date Code

Logo

Package

T

VJ

°C

M

D

Nm2

mounting torque

1.5

T

stg

°C125

storage temperature

-40

Weight g24

Symbol Definition typ. max.min.Conditions

virtual junction temperature

Unit

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

6.0

10.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

100 A

per terminal

150-40

terminal to terminal

ECO-PAC2

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

VUO98-12NO7 494496Box 25VUO98-12NO7Standard

2500

3000

ISOL

threshold voltage

V0.81

mΩ

V

0 max

R

0 max

slope resistance *

4.6

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Rectifier

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20130327aData according to IEC 60747and per semiconductor unless otherwise specified

VUO98-12NO7

VUO98-12NO7

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