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VUO98-12NO7
P1-P3
P4-P5
VUO98-12NO7
1.5
5
±
0
.2
10.95 ±
0.
2
3.3 ±0
.
2
5.7 ±
0.
2
34.3 ±0.2
15.8 ±
0.
2
1.55 ±
0.
2
1.5
5
±
0
.2
9.4 ±
0.
2
3.
3 ±
0.2
12
±
0.2
31
.6 ±
0
.1
25
±
0.2
1.5
1
8
2
43
8.3
51 ±
0.2
20.3 ±
0.
2
35.7°
4
5
°
Ø
4
.
3
±
0
.
2
BD
F
H
J
MO
R
T
W
AC
E
G
I
K
LN
P
S
V
X
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
~
K10
EG 1
~
L9
~
A1
PS 1
8
Outlines
ECO-PAC2
IXYS reserv
es the right to change limits, conditions and dimensions.
20130327a
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
VUO98-12NO7
0
1
1
100
1000
10000
V
F
[V]
I
F
[A]
0.4
0.8
1.2
1.6
2.0
0
40
80
120
160
10
-3
10
-2
10
-1
10
0
200
300
400
500
600
700
1
10
100
1000
10000
0.0
0.2
0.4
0.6
0.8
0
25
50
75
100
125
150
0
1
02
03
04
0
0
10
20
30
40
50
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
I
FSM
[A]
t[
s
]
t[
m
s
]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/
W]
t[
m
s
]
Fig. 1
Forward c
urrent versus
voltage
drop per diode
Fig. 2
Surge
overload current
Fig. 3
I
2
tv
e
r
s
u
st
i
m
ep
e
rd
i
o
d
e
Fig. 4
P
ower dissipation v
s. direct output curr
ent & ambient temper
ature
Fig. 5
M
ax. forward current vs.
case temperat
ure
Fig. 6
T
ransient thermal i
mpedance junction to
case
Cons
tants
for Z
thJC
calculation:
iR
th
(K/W)
t
i
(s)
1
0.09
0.01
2
2
0.05
0.00
7
3
0.32
0.03
6
4
0.24
0.10
2
0.8 x V
RR
M
50 Hz
T
VJ
=2
5
°
C
T
VJ
=4
5
°
C
T
VJ
=4
5
°
C
V
R
= 0
V
R
thJA
:
0.6
KW
0.8
KW
1K
W
2K
W
4K
W
8K
W
DC =
1
0.5
0.4
0.3
3
0.1
7
0.0
8
DC
=
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=1
5
0
°
C
T
VJ
=1
5
0
°
C
T
VJ
=
125°C
150°C
Rectifier
IXYS reserv
es the right to change limits, conditions and dimensions.
20130327a
Data according to IEC 60747and per semiconductor
unless otherwise specified
©
2013
IXYS all rights reserved
P1-P3
P4-P5
VUO98-12NO7
Mfr. #:
Buy VUO98-12NO7
Manufacturer:
Littelfuse
Description:
Bridge Rectifiers 98 Amps 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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EMS
Payment:
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VUO98-12NO7