IRFD110PBF Datasheet IRFD110PBF, IRFD110 | P1-P3

Document Number: 91127 www.vishay.com

S10-2466-Rev. C, 25-Oct-10 1

Power MOSFET

IRFD110, SiHFD110

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

•End Stackable

• 175 °C Operating Temperature

• Fast Switching and Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

DD

= 25 V, starting T

J

= 25 °C, L = 52 mH, R

g

= 25 , I

AS

= 2.0 A (see fig. 12).

c. I

SD

 5.6 A, dI/dt  75 A/μs, V

DD

 V

DS

, T

J

 175 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

(V) 100

R

DS(on)

()V

GS

= 10 V 0.54

Q

g

(Max.) (nC) 8.3

Q

gs

(nC) 2.3

Q

gd

(nC) 3.8

Configuration Single

N-Channel MOSFET

G

D

S

HVMDIP

D

S

G

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package HVMDIP

Lead (Pb)-free

IRFD110PbF

SiHFD110-E3

SnPb

IRFD110

SiHFD110

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

100

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current V

GS

at 10 V

T

A

= 25 °C

I

D

1.0

AT

A

= 100 °C 0.71

Pulsed Drain Current

a

I

DM

8.0

Linear Derating Factor 0.0083 W/°C

Single Pulse Avalanche Energy

b

E

AS

140 mJ

Repetitive Avalanche Current

a

I

AR

1.0 A

Repetitive Avalanche Energy

a

E

AR

0.13 mJ

Maximum Power Dissipation T

A

= 25 °C P

D

1.3 W

Peak Diode Recovery dV/dt

c

dV/dt 5.5 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

d

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91127

2 S10-2466-Rev. C, 25-Oct-10

IRFD110, SiHFD110

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

- 120 °C/W

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 100 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.12 - V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 100 V, V

GS

= 0 V - - 25

μA

V

DS

= 80 V, V

GS

= 0 V, T

J

= 150 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 0.60 A

b

- - 0.54 

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 0.60 A

b

0.80 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

- 180 -

pFOutput Capacitance C

oss

-81-

Reverse Transfer Capacitance C

rss

-15-

Total Gate Charge Q

g

V

GS

= 10 V

I

D

= 5.6 A, V

DS

= 80 V,

see fig. 6 and 13

b

--8.3

nC Gate-Source Charge Q

gs

--2.3

Gate-Drain Charge Q

gd

--3.8

Turn-On Delay Time t

d(on)

V

DD

= 50 V, I

D

= 5.6 A,

R

g

= 24 , R

D

= 8.4 , see fig. 10

b

-6.9-

ns

Rise Time t

r

-16-

Turn-Off Delay Time t

d(off)

-15-

Fall Time t

f

-9.4-

Internal Drain Inductance L

D

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0-

nH

Internal Source Inductance L

S

-6.0-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--1.0

A

Pulsed Diode Forward Current

a

I

SM

--8.0

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 1.0 A, V

GS

= 0 V

b

--2.5V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= 5.6 A, dI/dt = 100 A/μs

b

- 100 200 ns

Body Diode Reverse Recovery Charge Q

rr

- 0.44 0.88 μC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

D

S

G

S

D

G

Document Number: 91127 www.vishay.com

S10-2466-Rev. C, 25-Oct-10 3

IRFD110, SiHFD110

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, T

A

= 25 °C

Fig. 2 - Typical Output Characteristics, T

A

= 175 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91127_01

20 µs Pulse Width

T

A

= 25 °C

4.5 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

10

1

10

0

10

0

10

1

10

-1

91127_02

10

1

10

0

10

0

10

1

10

-1

Bottom

To p

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

A

= 175 °C

4.5 V

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

91127_03

10

1

10

0

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

5678910

4

10

-1

25 °C

175 °C

20 µs Pulse Width

V

DS

= 50 V

91127_04

I

D

= 5.6 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

- 60 - 40 - 20 0 20 40

60

80 100 120 140 160

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

180

IRFD110PBF

IRFD110PBF

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