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IRFD110PBF

P1-P3P4-P6P7-P9
www.vishay.com Document Number: 91127
4 S10-2466-Rev. C, 25-Oct-10
IRFD110, SiHFD110
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
91127_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
02 864
I
D
= 5.6 A
V
DS
= 20 V
For test circuit
see figure 13
10
V
DS
= 50 V
V
DS
= 80 V
91127_07
25 °C
175 °C
V
GS
= 0 V
10
-1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.5 0.90.80.70.6 1.0 1.21.1
91127_08
I
D
, Drain Current (A)
10
2
2
5
2
5
2
5
V
DS
, Drain-to-Source Voltage (V)
1
10
10
2
25 25 2
5
0.1
1
10
0.1
25
10
3
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
T
A
= 25 °C
T
J
= 175 °C
Single Pulse
Document Number: 91127 www.vishay.com
S10-2466-Rev. C, 25-Oct-10 5
IRFD110, SiHFD110
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
91127_09
I
D
, Drain Current (A)
T
A
, Ambient Temperature (°C)
0.0
0.2
0.4
0.8
0.6
25 150125100
75
50 175
1.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
91127_11
0 - 0.5
0.2
0.1
0.05
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.02
Thermal Response (Z
thJA
)
t
1
, Rectangular Pulse Duration (s)
10
-5
10
-4
10
-3
10
-2
0.1 1 10
10
2
10
3
1
0.1
10
-2
10
2
10
10
3
www.vishay.com Document Number: 91127
6 S10-2466-Rev. C, 25-Oct-10
IRFD110, SiHFD110
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
g
I
AS
0.01 W
t
p
D.U.T.
L
V
DS
+
-
V
DD
10 V
Vary t
p
to obtain
required I
AS
I
AS
V
DS
V
DD
V
DS
t
p
91127_12c
0
50
100
200
300
350
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
0.82 A
1.4 A
2.0 A
V
DD
= 25 V
175
150
250
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P1-P3P4-P6P7-P9

IRFD110PBF

Mfr. #:
Buy IRFD110PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 100V HEXFET MOSFET HEXDI
Lifecycle:
New from this manufacturer.
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