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BYC30W-600PQ

P1-P3P4-P6P7-P9P10-P10
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
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2
4
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BYC30W-600P
Hyperfast power diode
10 February 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Hyperfast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
•
Low leakage current
•
Low thermal resistance
•
Low reverse recovery current
•
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
Active PFC in air conditioner
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
•
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
- - 600 V
I
F(AV)
average forward
current
δ = 0.5; T
mb
≤ 115 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- - 30 A
Static characteristics
V
F
forward voltage I
F
= 30 A; T
j
= 150 °C; Fig. 6 - 1.38 1.8 V
Dynamic characteristics
t
rr
reverse recovery time I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C; Fig. 7
- 18 22 ns
NXP Semiconductors
BYC30W-600P
Hyperfast power diode
BYC30W-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 February 2014 2 / 9
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb mb mounting base; connected to
cathode
21
TO-247 (SOD142)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYC30W-600P TO-247 Plastic Single-ended through-hole package; Heatsink mounted;
1 mounting hole; 2-lead TO-247
SOD142
7. Marking
Table 4. Marking codes
Type number Marking code
BYC30W-600P BYC30W-600P
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 600 V
V
RWM
crest working reverse voltage - 600 V
V
R
reverse voltage DC - 600 V
I
F(AV)
average forward current δ = 0.5; T
mb
≤ 115 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
- 30 A
I
FRM
repetitive peak forward current δ = 0.5; t
p
= 25 µs; T
mb
≤ 115 °C;
square-wave pulse
- 60 A
P1-P3P4-P6P7-P9P10-P10

BYC30W-600PQ

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Manufacturer:
WeEn Semiconductors
Description:
Rectifiers Hyperfast pwr diode
Lifecycle:
New from this manufacturer.
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