NXP Semiconductors
BYC30W-600P
Hyperfast power diode
BYC30W-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 February 2014 3 / 9
Symbol Parameter Conditions Min Max Unit
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 270 AI
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse; Fig. 4
- 300 A
T
stg
storage temperature -65 175 °C
T
j
junction temperature - 175 °C
I
F(AV)
(A)
0 504020 3010
003aak738
30
60
90
P
tot
(W)
0
δ = 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
003aak739
I
F(AV)
(A)
0 302010
20
40
60
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
T
mb
(°C)
-50 20015050 1000
aaa-010282
15
30
45
I
F(AV)
(A)
0
115 °C
Fig. 3. Forward current as a function of mounting base
temperature; maximum values
t
p
(s)
10
-5
10
-2
10
-3
10
-4
aaa-010283
10
3
10
2
10
4
I
FSM
(A)
10
t
p
T
j(init)
= 25 °C max
I
F
I
FSM
t
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
