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IRLR4343-701PBF

P1-P3P4-P6P7-P9P10-P11
www.irf.com 1
3/26/04
Notes through are on page 10
PD - 95851
DIGITAL AUDIO MOSFET
IRLR4343
IRLU4343
IRLU4343-701
I-Pak Leadform 701
IRLU4343-701
Refer to page 10 for package outline
D-Pak
IRLR4343
I-Pak
IRLU4343
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low R
DSON
for Improved Efficiency
l Low Q
g
and Q
sw
for Better THD and Improved
Efficiency
l Low Q
rr
for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
Description
This Digital Audio HEXFET
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
S
D
G
V
DS
55 V
R
DS(ON)
typ. @ V
GS
= 10V
42
m
:
R
DS(ON)
typ. @ V
GS
= 4.5V
57
m
:
Q
g
typ.
28 nC
T
J
max
175 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Clamping Pressure
h
N
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
g
––– 1.9
R
θ
JA
Junction-to-Ambient (PCB Mounted)
gj
––– 50 °C/W
R
θ
JA
Junction-to-Ambient (free air)
g
––– 110
-40 to + 175
–––
79
39
0.53
Max.
19
80
±20
55
26
2 www.irf.com
IRLR/U4343 & IRLU4343-701
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 15 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 42 50
mΩ
––– 57 65
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -4.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 2.0 µA
––– ––– 25
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 8.8 ––– ––– S
Q
g
Total Gate Charge ––– 28 42
Q
gs
Pre-Vth Gate-to-Source Charge ––– 3.5 –––
V
GS
= 10V
Q
gd
Gate-to-Drain Charge ––– 9.5 –––
I
D
= 19A
Q
godr
Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19
t
d(on)
Turn-On Delay Time ––– 5.7 –––
t
r
Rise Time ––– 19 –––
t
d(off)
Turn-Off Delay Time ––– 23 ––– ns
t
f
Fall Time ––– 5.3 –––
C
iss
Input Capacitance ––– 740 –––
C
oss
Output Capacitance ––– 150 ––– pF
C
rss
Reverse Transfer Capacitance ––– 59 –––
C
oss
Effective Output Capacitance ––– 250 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
i
A
E
AR
Repetitive Avalanche Energy
i
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– 26
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 80
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 52 78 ns
Q
rr
Reverse Recovery Charge ––– 100 150 nC
V
DS
= 25V, I
D
= 19A
V
DS
= 44V
V
DD
= 28V, V
GS
= 10V
e
integral reverse
ƒ = 1.0MHz, See Fig.5
I
D
= 19A
R
G
= 2.5Ω
V
GS
= 0V, V
DS
= 0V to -44V
MOSFET symbol
showing the
See Fig. 14, 15, 17a, 17b
Typ.
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.7A
e
T
J
= 25°C, I
S
= 19A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 19A
di/dt = 100A/µs
e
V
GS
= 0V
Conditions
p-n junction diode.
V
DS
= 50V
and center of die contact
f
Max.
160
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V, I
D
= 3.8A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
www.irf.com 3
IRLR/U4343 & IRLU4343-701
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 25°C
2.3V
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM 2.3V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60µs PULSE WIDTH
Tj = 175°C
2.3V
VGS
TOP 15V
10V
8.0V
4.5V
3.5V
3.0V
2.5V
BOTTOM 2.3V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 19A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 10203040
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28V
VDS= 11V
I
D
= 19A
FOR TEST CIRCUIT
SEE FIGURE 19
0 2 4 6 8 10
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 30V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
P1-P3P4-P6P7-P9P10-P11

IRLR4343-701PBF

Mfr. #:
Buy IRLR4343-701PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 26A DPAK
Lifecycle:
New from this manufacturer.
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