IRF7314PbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage -0.78 -1.0 V T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
t
rr
Reverse Recovery Time 47 71 ns T
J
= 25°C, I
F
= -2.9A
Q
rr
Reverse RecoveryCharge 49 73 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-21
-2.5
A
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -2.9A, di/dt ≤ -77A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 35mH
R
G
= 25Ω, I
AS
= -2.9A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.031 V/°C Reference to 25°C, I
D
= -1mA
0.049 0.058 V
GS
= -4.5V, I
D
= -2.9A
0.082 0.098 V
GS
= -2.7V, I
D
= -1.5A
V
GS(th)
Gate Threshold Voltage -0.70 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 5.9 S V
DS
= -10V, I
D
= -1.5A
-1.0 V
DS
= -16V, V
GS
= 0V
-25 V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage 100 V
GS
= -12V
Gate-to-Source Reverse Leakage -100 V
GS
= 12V
Q
g
Total Gate Charge 19 29 I
D
= -2.9A
Q
gs
Gate-to-Source Charge 4.0 6.1 nC V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge 7.7 12 V
GS
= -4.5V, See Fig. 10
t
d(on)
Turn-On Delay Time 15 22 V
DD
= -10V
t
r
Rise Time 40 60 I
D
= -2.9A
t
d(off)
Turn-Off Delay Time 42 63 R
G
= 6.0Ω
t
f
Fall Time 49 73 R
D
= 3.4Ω
C
iss
Input Capacitance 780 V
GS
= 0V
C
oss
Output Capacitance 470 pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G
