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IRF7314PBF

P1-P3P4-P6P7-P7
IRF7314PbF
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
R
DS(on)
, Drain-to-Source On Resistance ( Ω )
25 50 75 100 125 150
0
100
200
300
400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
-1.3A
-2.3A
-2.9A
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
I = -2.9A
V = -4.5V
D
GS
0.0
0.2
0.4
0.6
0.8
0 4 8 121620
A
-I , Drain Current (A)
D
V = -4.5V
GS
V = -2.7V
GS
0.03
0.04
0.05
0.06
0.07
0.08
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to-Source Voltage (V)
I = -5.3A
D
IRF7314PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25 30
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
I = -2.9A
V = -16V
D
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7314PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BAS IC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BAS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BAS IC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P RI NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O JE DE C OU T LI NE MS -012 AA.
NOT E S :
1. DIMENS IONING & TOLERANCING PE R AS ME Y14.5M-1994.
2. CONT ROLL ING DIMENS ION: MILLIMET ER
3. DI ME N S IONS ARE S H OWN IN MIL L I ME T E R S [I NCH E S ] .
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS.
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS.
MOLD PROT RU SIONS NOT T O EXCE ED 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF L EAD F OR S OLDERING T O
A S UBS T RATE .
MOLD PROT RU SIONS NOT T O EXCE ED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
E XAMPL E : T H I S I S AN I R F 71 01 (MOS F E T )
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
P1-P3P4-P6P7-P7

IRF7314PBF

Mfr. #:
Buy IRF7314PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 20V DUAL N / P CH 12V VGS MAX
Lifecycle:
New from this manufacturer.
Delivery:
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