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L6384D013TR

P1-P3P4-P6P7-P9P10-P10
HIGH VOLTAGE RAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
SHUT DOWN INPUT
DEAD TIME SETTING
UNDER VOLTAGE LOCK OUT
INTEGRATED BOOTSTRAP DIODE
CLAMPING ON Vcc
SO8/MINIDIP PACKAGES
DESCRIPTION
The L6384 is an high-voltage device, manufac-
tured with the BCD"OFF-LINE" technology. It has
an Half - Bridge Driver structure that enables to
drive N Channel Power MOS or IGBT. The Upper
(Floating) Section is enabled to work with voltage
Rail up to 600V. The Logic Inputs are CMOS/TTL
compatible for ease of interfacing with controlling
devices. Matched delays between Lower and Up-
per Section simplify high frequency operation.
Dead time setting can be readily accomplished by
means of an external resistor.
May 2000
®
LOGIC
UV
DETECTION
LEVEL
SHIFTER
RS
V
CC
LVG
DRIVER
V
CC
IN
DT/SD
V
BOOT
HVG
DRIVER
HVG
H.V.
LOAD
OUT
LVG
GND
D97IN518A
DEAD
TIME
V
CC
Idt
Vthi
BOOTSTRAP DRIVER
C
BOOT
4
3
5
6
7
8
1
2
BLOCK DIAGRAM
SO8 Minidip
ORDERING NUMBERS:
L6384D L6384
L6384
HIGH-VOLTAGE HALF BRIDGE DRIVER
1/10
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vout Output Voltage -3 to Vboot -18 V
Vcc Supply Voltage (*) - 0.3 to 14.6 V
Is Supply Current (*) 25 mA
Vboot Floating Supply Voltage -1 to 618 V
Vhvg Upper Gate Output Voltage -1 to Vboot V
Vlvg Lower Gate Output Voltage -0.3 to Vcc +0.3 V
Vi Logic Input Voltage -0.3 to Vcc +0.3 V
Vsd Shut Down/Dead Time Voltage -0.3 to Vcc +0.3 V
dVout/dt Allowed Output Slew Rate 50 V/ns
Ptot Total Power Dissipation (Tj = 85 °C) 750 mW
Tj Junction Temperature 150 °C
Ts Storage Temperature -50 to 150 °C
(*) The device has an internal Clamping Zener between GND and the Vcc pin, It must not be supplied by a Low Impedence Voltage Source.
Note:
ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
Symbol Parameter SO8 Minidip Unit
R
th j-amb
Thermal Resistance Junction to Ambient 150 100 °C/W
PIN DESCRIPTION
N. Name Type Function
1 IN I Logic Input: it is in phase with HVG and in opposition of phase with LGV. It is compatible
to V
CC
voltage. [Vil Max = 1.5V, Vih Min = 3.6V]
2 Vcc I Supply input voltage: there is an internal clamp [Typ. 15.6V]
3 DT/SD I High impedance pin with two functionalities. When pulled lower than Vdt [Typ. 0.5V] the
device is shut down. A voltage higher than Vdt sets the dead time between high side gate
driver and low side gate driver. The dead time value can be set forcing a certain voltage
level on the pin or connecting a resistor between pin 3 and ground.
Care must be taken to avoid below threshold spikes on pin 3 that can cause undesired
shut down of the IC. For this reason the connection of the components between pin 3 and
ground has to be as short as possible. This pin can not be left floating for the same reason.
The pin has not be pulled through a low impedance to V
CC
, because of the drop on the
current source that feeds Rdt. The operative range is: Vdt....270K ⋅ Idt, that allows a dt
range of 0.4 - 3.1µs.
4 GND Ground
IN
V
CC
DT/SD
GND
1
3
2
4 LVG
VOUT
HVG
V
BOOT
8
7
6
5
D97IN519
PIN CONNECTION
L6384
2/10
RECOMMENDED OPERATING CONDITIONS
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
Vout 6 Output Voltage Note1 580 V
Vboot -
Vout
8 Floating Supply Voltage Note1 17 V
fsw Switching Frequency HVG,LVG load CL = 1nF 400 kHz
Vcc 2 Supply Voltage Vclamp V
T
j
Junction Temperature -45 125 °C
Note 1:
If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
ELECTRICAL CHARACTERISTICS
AC Operation (V
CC
= 14.4V; Tj = 25°C)
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
ton 1 vs
5,7
High/Low Side Driver
Turn-On Propagation Delay
Vout = 0V
R
dt
= 47kΩ
200+dt ns
tonsd 3 vs
5,7
Shut Down Input Propagation Delay 220 280 ns
toff 1 vs
5,7
High/Low Side Driver
Turn-Off Propagation Delay
Vout = 0V
R
dt
= 47kΩ
250 300 ns
Vout = 0V
R
dt
= 146kΩ
200 250 ns
Vout = 0V
R
dt
= 270kΩ
170 200 ns
tr 7,5 Rise Time CL = 1000pF 70 ns
tf 7,5 Fall Time CL = 1000pF 30 ns
DC Operation (V
CC
= 14.4V; Tj = 25°C)
Supply Voltage Section
Vclamp 2 Supply Voltage Clamping Is = 5mA 14.6 15.6 16.6 V
Vccth1 2 Vcc UV Turn On Threshold 11.5 12 12.5 V
Vccth2 2 Vcc UV Turn Off Threshold 9.5 10 10.5 V
N. Name Type Function
5 LVG O Low Side Driver Output: the output stage can deliver 400mA source and 650mA sink [Typ.
Values].
The circuit guarantees 0.3V max on the pin (@ I
sink
= 10mA) with V
CC
> 3V and lower than
the turn on threshold. This allows to omit the bleeder resistor connected between the gate
and the source of the external mosfet normally used to hold the pin low; the gate driver
ensures low impedance also in SD conditions.
6 Vout O Upper Driver Floating Reference: layout care has to be taken to avoid below ground
spikes on this pin.
7 HVG O High Side Driver Output: the output stage can deliver 400mA source and 650mA sink
[Typ. Values].
The circuit gurantees 0.3V max between this pin and Vout (@ I
sink
= 10mA) with V
CC
> 3V
and lower than the turn on threshold. This allows to omit the bleeder resistor connected
between the gate and the source of the external mosfet normally used to hold the pin low;
the gate driver ensures low impedance also in SD conditions.
8 Vboot Bootstrap Supply Voltage: it is the upper driver floating supply. The bootstrap capacitor
connected between this pin and pin 6 can be fed by an internal structure named "bootstrap
driver" (a patented structure). This structure can replace the external bootstrap diode.
PIN DESCRIPTION
(continued)
L6384
3/10
P1-P3P4-P6P7-P9P10-P10

L6384D013TR

Mfr. #:
Buy L6384D013TR
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi-Volt Half Bridge
Lifecycle:
New from this manufacturer.
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