IRLU9343PBF Datasheet IRLR9343TRPBF, IRLU9343PBF, IRLR9343PBF | P1-P3

www.irf.com 1

12/07/04

Notes  through  are on page 10

Description

This Digital Audio HEXFET

®

is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

PD - 95386A

Features

l Advanced Process Technology

l Key Parameters Optimized for Class-D Audio

Amplifier Applications

l Low R

DSON

for Improved Efficiency

l Low Q

g

and Q

sw

for Better THD and Improved

Efficiency

l Low Q

rr

for Better THD and Lower EMI

l 175°C Operating Junction Temperature for

Ruggedness

l Repetitive Avalanche Capability for Robustness and

Reliability

l Multiple Package Options

l Lead-Free

S

D

G

DIGITAL AUDIO MOSFET

V

DS

-55

V

R

DS(ON)

typ. @ V

GS

= -10V

93

m

R

DS(ON)

typ. @ V

GS

= -4.5V

150

m

Q

g

typ.

31

nC

T

J

max

175

°C

Key Parameters

IRLR9343PbF

IRLU9343PbF

IRLU9343-701PbF

I-Pak Leadform 701

IRLU9343-701

Refer to page 10 for package outline

D-Pak

IRLR9343

I-Pak

IRLU9343

Absolute Maximum Ratings

Parameter Units

V

DS

Drain-to-Source Voltage V

V

GS

Gate-to-Source Voltage

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ -10V

A

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Power Dissipation W

P

D

@T

C

= 100°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Clamping Pressure

N

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 1.9

R

θ

JA

Junction-to-Ambient (PCB Mounted)

––– 50 °C/W

R

θJA

Junction-to-Ambient (free air)

––– 110

Max.

-14

-60

±20

-55

-20

-40 to + 175

–––

79

39

0.53

IRLR/U9343PbF & IRLU9343-701PbF

2 www.irf.com

S

D

G

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage -55 ––– ––– V

∆ΒV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– -52 ––– mV/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 93 105

m

Ω

––– 150 170

V

GS(th)

Gate Threshold Voltage -1.0 ––– ––– V

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Coefficient ––– -3.7 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– -2.0 µA

––– ––– -25

I

GSS

Gate-to-Source Forward Leakage ––– ––– -100 nA

Gate-to-Source Reverse Leakage ––– ––– 100

g

fs

Forward Transconductance 5.3 ––– ––– S

Q

g

Total Gate Charge ––– 31 47

Q

gs

Gate-to-Source Charge ––– 7.1 –––

V

GS

= -10V

Q

gd

Gate-to-Drain Charge ––– 8.5 –––

I

D

= -14A

Q

godr

Gate Charge Overdrive ––– 15 ––– See Fig. 6 and 19

t

d(on)

Turn-On Delay Time ––– 9.5 –––

t

r

Rise Time ––– 24 –––

t

d(off)

Turn-Off Delay Time ––– 21 ––– ns

t

f

Fall Time ––– 9.5 –––

C

iss

Input Capacitance ––– 660 –––

C

oss

Output Capacitance ––– 160 ––– pF

C

rss

Reverse Transfer Capacitance ––– 72 –––

C

oss

Effective Output Capacitance ––– 280 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

Avalanche Characteristics

Parameter Units

E

AS

Single Pulse Avalanche Energy

mJ

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

@ T

C

= 25°C

Continuous Source Current ––– ––– -20

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– -60

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– -1.2 V

t

rr

Reverse Recovery Time ––– 57 86 ns

Q

rr

Reverse Recovery Charge ––– 120 180 nC

V

GS

= -4.5V, I

D

= -2.7A

––– 120

See Fig. 14, 15, 17a, 17b

V

DS

= V

GS

, I

D

= -250µA

V

DS

= -55V, V

GS

= 0V

V

DS

= -55V, V

GS

= 0V, T

J

= 125°C

V

GS

= -20V

V

GS

= 20V

I

D

= -14A

Typ. Max.

ƒ = 1.0MHz, See Fig.5

V

GS

= 0V, V

DS

= 0V to -44V

V

GS

= 0V

T

J

= 25°C, I

F

= -14A

di/dt = 100A/µs

T

J

= 25°C, I

S

= -14A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 0V, I

D

= -250µA

Reference to 25°C, I

D

= -1mA

V

GS

= -10V, I

D

= -3.4A

MOSFET symbol

R

G

= 2.5

Ω

V

DS

= -25V, I

D

= -14A

V

DS

= -44V

Conditions

and center of die contact

V

DD

= -28V, V

GS

= -10V

V

DS

= -50V

IRLR/U9343PbF & IRLU9343-701PbF

www.irf.com 3

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 25°C

-2.5V

VGS

TOP -15V

-12V

-10V

-8.0V

-5.5V

-4.5V

-3.0V

BOTTOM -2.5V

0.1 1 10 100

-V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤

60µs PULSE WIDTH

Tj = 175°C

-2.5V

VGS

TOP -15V

-12V

-10V

-8.0V

-5.5V

-4.5V

-3.0V

BOTTOM -2.5V

0.0 5.0 10.0 15.0

-V

GS

, Gate-to-Source Voltage (V)

0.1

1.0

10.0

100.0

-

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

V

DS

= -25V

≤ 60µs PULSE WIDTH

T

J

= 25°C

T

J

= 175°C

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= -14A

V

GS

= -10V

1 10 100

-V

DS

, Drain-to-Source Voltage (V)

10

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

Coss

Crss

Ciss

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0 1020304050

Q

G

Total Gate Charge (nC)

0

4

8

12

16

20

-

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= -44V

VDS= -28V

VDS= -11V

I

D

= -14A

FOR TEST CIRCUIT

SEE FIGURE 19

IRLU9343PBF

IRLU9343PBF

Products related to this Datasheet