NXP Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic V
F
≤ 1.03 V
• High thermal cycling performance
• Isolated mounting tab I
F(AV)
= 9 A
t
rr
≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic
lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package.
The BYV29X series is supplied in the SOD113 package.
PINNING SOD100 SOD113
PIN DESCRIPTION
1 cathode (k)
2 anode (a)
tab isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BYV29F/BYV29X -300 -400 -500
V
RRM
Peak repetitive reverse voltage - 300 400 500 V
V
R
Continuous reverse voltage T
hs
≤ 138˚C
1
- 300 400 500 V
I
F(AV)
Average forward current
2
square wave; δ = 0.5; - 9 A
T
hs
≤ 90 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 150 ˚C
k a
12
12
case
12
case
1 T
hs
de-rating for thermal stability.
2 Neglecting switching and reverse current losses
February 1999 1 Rev 1.400
