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BYV29X-500,127

P1-P3P4-P6P7-P9P10-P10
NXP Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
C
isol
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
R
th j-a
Thermal resistance junction to in free air. - 55 - K/W
ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 8 A; T
j
= 150˚C - 0.90 1.03 V
I
F
= 8 A - 1.05 1.25 V
I
F
= 20 A - 1.20 1.40 V
I
R
Reverse current V
R
= V
RRM
- 2.0 50 µA
V
R
= V
RRM
; T
j
= 100 ˚C - 0.1 0.35 mA
Q
s
Reverse recovery charge I
F
= 2 A to V
R
≥ 30 V; - 40 60 nC
dI
F
/dt = 20 A/µs
t
rr
Reverse recovery time I
F
= 1 A to V
R
≥ 30 V; - 50 60 ns
dI
F
/dt = 100 A/µs
I
rrm
Peak reverse recovery current I
F
= 10 A to V
R
≥ 30 V; - 4.0 5.5 A
dI
F
/dt = 50 A/µs; T
j
= 100˚C
V
fr
Forward recovery voltage I
F
= 10 A; dI
F
/dt = 10 A/µs - 2.5 - V
February 1999 2 Rev 1.400
NXP Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
0246810
0
2
4
6
8
10
12
a = 1.57
1.9
2.2
2.8
4
BYV29
Rs = 0.019 Ohms
Vo = 0.89V
IF(AV) / A
PF / W
Ths(max) / C
150
139
128
117
106
95
84
time
time
V
F
V
fr
V
F
I
F
1
10
trr / ns
110
100
1000
100
dIF/dt (A/us)
1A
IF=10 A
Tj = 25 C
Tj = 100C
0 5 10 15
0
5
10
15
0.5
0.2
0.1
BYV29
IF(AV) / A
PF / W
D = 1.0
Rs = 0.0190 Ohms
Vo = 0.8900 V
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
122.5
95
67.5
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=10A
Tj = 25 C
Tj = 100C
February 1999 3 Rev 1.400
NXP Semiconductors Product specification
Rectifier diodes BYV29F, BYV29X series
ultrafast
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.8. Maximum Q
s
at T
j
= 25˚C
Fig.9. Transient thermal impedance Z
th j-hs
= f(t
p
)
0 1 2
30
20
10
0
typ
max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV29F
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
1
10
100
1000
Qs / nC
1.0 10 100
-dIF/dt (A/us)
IF = 10 A
2 A
February 1999 4 Rev 1.400
P1-P3P4-P6P7-P9P10-P10

BYV29X-500,127

Mfr. #:
Buy BYV29X-500,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers EPI
Lifecycle:
New from this manufacturer.
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