OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MJH6287G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 7
1 Publication Order Number:
MJH6284/D
MJH6284(NPN),
MJH6287(PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general−purpose amplifier and
low−speed switching motor control applications.
Features
• Similar to the Popular NPN 2N6284 and the PNP 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Built−in Collector−Emitter Diode
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage V
CEO
100 Vdc
Collector−Base Voltage V
CB
100 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous
− Peak
I
C
20
40
Adc
Base Current I
B
0.5 Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
P
D
160
1.28
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.78
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
160
P
D
, POWER DISSIPATION (WATTS)
0
T
C
, CASE TEMPERATURE (°C)
50 75 125 150 200100 17525
Figure 1. Power Derating
0
20
40
60
80
100
140
120
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−93
(TO−218)
CASE 340D
DARLINGTON 20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
http://onsemi.com
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MJH6284 (NPN), MJH6287 (PNP)
http://onsemi.com
2
MARKING DIAGRAMS
MJH628x
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
AYWWG
MJH628x
MJH628x = Device Code
x = 4 or 7
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
ORDERING INFORMATION
Device Order Number Package Type Shipping
MJH6284G TO−218
(Pb−Free)
30 Units / Rail
MJH6287G TO−218
(Pb−Free)
30 Units / Rail
MJH6284G TO−247
(Pb−Free)
30 Units / Rail
MJH6287G TO−247
(Pb−Free)
30 Units / Rail
MJH6284 (NPN), MJH6287 (PNP)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 0.1 Adc, I
B
= 0) V
CEO(sus)
100 − Vdc
Collector Cutoff Current (V
CE
= 50 Vdc, I
B
= 0) I
CEO
− 1.0 mAdc
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
C
= 150_C)
I
CEX
−
−
0.5
5.0
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
− 2.0 mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
(I
C
= 20 Adc, V
CE
= 3.0 Vdc)
h
FE
750
100
18,000
−
−
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 40 mAdc)
(I
C
= 20 Adc, I
B
= 200 mAdc)
V
CE(sat)
−
−
2.0
3.0
Vdc
Base−Emitter On Voltage (I
C
= 10 Adc, V
CE
= 3.0 Vdc) V
BE(on)
− 2.8 Vdc
Base−Emitter Saturation Voltage (I
C
= 20 Adc, I
B
= 200 mAdc) V
BE(sat)
− 4.0 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz) f
T
4.0 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) MJH6284
MJH6287
C
ob
−
−
400
600
pF
Small−Signal Current Gain (I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz) h
fe
300 − −
SWITCHING CHARACTERISTICS
Resistive Load
Symbol
Typical
Unit
NPN PNP
Delay Time
V
CC
= 30 Vdc, I
C
= 10 Adc
I
B1
= I
B2
= 100 mA
Duty Cycle = 1.0%
t
d
0.1 0.1 ms
Rise Time t
r
0.3 0.3
Storage Time t
s
1.0 1.0
Fall Time t
f
3.5 2.0
1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
V2
APPROX
+12 V
0
V1
APPROX
-8.0 V
25 ms
t
r
, t
f
, ≤ 10 ns
DUTY CYCLE = 1.0%
for t
d
and t
r
, D
1
is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
TUT
V
CC
-30 V
SCOPE
≈ 8.0 k ≈ 50
+4.0 V
R
B
51 D
1
R
C
NPN
MJH6284
PNP
MJH6287
COLLECTOR COLLECTOR
EMITTER EMITTER
BASE BASE
P1-P3P4-P6P7-P7

MJH6287G

Mfr. #:
Buy MJH6287G
Manufacturer:
ON Semiconductor
Description:
Darlington Transistors 20A 100V Bipolar Power PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet