MJH6284 (NPN), MJH6287 (PNP)
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.03
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1.0 3.0 5.0 10 30 50 100 300 500
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 0.78°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.1 0.50.2
RESISTANCE (NORMALIZED)
1000
0.5
0.3
0.07
0.03
0.01 0.02 2.0 20 2000.3
0.2
0.1
0.05
0.02
0.01
Figure 5. MJH6284, MJH6287
T
J
= 150°C
dc
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
50
2.0
I
C
, COLLECTOR CURRENT (AMPS)
0.1
5.0 10
10
0.5
50
0.2
5.0
20
1.0
20 100
0.05
0.5 ms
1.0 ms
5.0 ms
0.1 ms
FBSOA, FORWARD BIAS SAFE OPERATING AREA
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
C
= 25°C (SINGLE PULSE)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
50
60
I
C
, COLLECTOR CURRENT (AMPS)
10 20 80
40
40
10
DUTY CYCLE = 10%
30
20
30 110100
0
Figure 6. Maximum RBSOA, Reverse Bias
Safe Operating Area
L = 200 mH
I
C
/I
B
≥ 100
T
C
= 25°C
V
BE(off)
= 0-5.0 V
R
BE
= 47 W
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
