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74HCT164PW-Q100J

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
74HC_HCT164_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 16 August 2013 6 of 18
NXP Semiconductors
74HC164-Q100; 74HCT164-Q100
8-bit serial-in, parallel-out shift register
9. Static characteristics
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC164-Q100
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
- - 8.0 - 80 - 160 A
C
I
input
capacitance
-3.5- - - - -pF
74HCT164-Q100
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
74HC_HCT164_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 16 August 2013 7 of 18
NXP Semiconductors
74HC164-Q100; 74HCT164-Q100
8-bit serial-in, parallel-out shift register
10. Dynamic characteristics
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--8 - 80 - 160A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 100 360 - 450 - 490 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF; test circuit, see Figure 10; unless otherwise specified
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC164-Q100
t
pd
propagation
delay
CP to Qn; see Figure 7
[1]
V
CC
= 2.0 V - 41 170 - 215 - 255 ns
V
CC
= 4.5 V - 15 34 - 43 - 51 ns
V
CC
= 5.0 V; C
L
=15pF - 12 - - - - - ns
V
CC
= 6.0 V - 12 29 - 37 - 43 ns
t
PHL
HIGH to LOW
propagation
delay
MR to Qn; see Figure 8
V
CC
= 2.0 V - 39 140 - 175 - 210 ns
V
CC
= 4.5 V - 14 28 - 35 - 42 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - - - ns
V
CC
= 6.0 V - 11 24 - 30 - 36 ns
t
t
transition time see Figure 7
[2]
V
CC
= 2.0 V - 19 75 - 95 - 110 ns
V
CC
= 4.5 V - 7 15 - 19 - 22 ns
V
CC
= 6.0 V - 6 13 - 16 - 19 ns
t
W
pulse width CP HIGH or LOW;
see Figure 7
V
CC
= 2.0 V 80 14 - 100 - 120 - ns
V
CC
= 4.5 V 16 5 - 20 - 24 - ns
V
CC
= 6.0 V 14 4 - 17 - 20 - ns
MR LOW; see Figure 8
V
CC
= 2.0 V 60 17 - 75 - 90 - ns
V
CC
= 4.5 V 12 6 - 15 - 18 - ns
V
CC
= 6.0 V 10 5 - 13 - 15 - ns
74HC_HCT164_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 16 August 2013 8 of 18
NXP Semiconductors
74HC164-Q100; 74HCT164-Q100
8-bit serial-in, parallel-out shift register
t
rec
recovery time MR to CP; see Figure 8
V
CC
= 2.0 V 60 17 - 75 - 90 - ns
V
CC
= 4.5 V 12 6 - 15 - 18 - ns
V
CC
= 6.0 V 10 5 - 13 - 15 - ns
t
su
set-up time DSA, and DSB to CP;
see Figure 9
V
CC
= 2.0 V 60 8 - 75 - 90 - ns
V
CC
= 4.5 V 12 3 - 15 - 18 - ns
V
CC
= 6.0 V 10 2 - 13 - 15 - ns
t
h
hold time DSA, and DSB to CP;
see Figure 9
V
CC
= 2.0 V +4 6- 4 - 4 - ns
V
CC
= 4.5 V +4 2- 4 - 4 - ns
V
CC
= 6.0 V +4 2- 4 - 4 - ns
f
max
maximum
frequency
for Cp, see Figure 7
V
CC
= 2.0 V 6 23 - 5 - 4 - MHz
V
CC
= 4.5 V 30 71 - 24 - 20 - MHz
V
CC
= 5.0 V; C
L
=15pF - 78 - - - - - MHz
V
CC
= 6.0 V 35 85 - 28 - 24 - MHz
C
PD
power
dissipation
capacitance
per package;
V
I
=GNDtoV
CC
[3]
-40- - - - - pF
74HCT164-Q100
t
pd
propagation
delay
CP to Qn; see Figure 7
[1]
V
CC
= 4.5 V - 17 36 - 45 - 54 ns
V
CC
= 5.0 V; C
L
=15pF - 14 - - - - - ns
t
PHL
HIGH to LOW
propagation
delay
MR to Qn; see Figure 8
V
CC
= 4.5 V - 19 38 - 48 - 57 ns
V
CC
= 5.0 V; C
L
=15pF - 16 - - - - - ns
t
t
transition time see Figure 7
[2]
V
CC
= 4.5 V - 7 15 - 19 - 22 ns
t
W
pulse width CP HIGH or LOW;
see Figure 7
V
CC
= 4.5 V 18 7 - 23 - 27 - ns
MR LOW; see Figure 8
V
CC
= 4.5 V 18 10 - 23 - 27 - ns
t
rec
recovery time MR to CP; see Figure 8
V
CC
= 4.5 V 16 7 - 20 - 24 - ns
t
su
set-up time DSA, and DSB to CP;
see Figure 9
V
CC
= 4.5 V 12 6 - 15 - 18 - ns
Table 7. Dynamic characteristics
…continued
GND = 0 V; t
r
= t
f
= 6 ns; C
L
= 50 pF; test circuit, see Figure 10; unless otherwise specified
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

74HCT164PW-Q100J

Mfr. #:
Buy 74HCT164PW-Q100J
Manufacturer:
Nexperia
Description:
Counter Shift Registers 74HCT164PW-Q100/TSSOP14/REEL 1
Lifecycle:
New from this manufacturer.
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