IRF3710PBF Datasheet IRF3710PBF | P1-P3

IRF3710PbF

HEXFET

®

Power MOSFET

07/23/10

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 0.75

R

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

R

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

V

DSS

= 100V

R

DS(on)

= 23mΩ

I

D

= 57A

S

D

G

TO-220AB

Advanced HEXFET

®

Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

Absolute Maximum Ratings

Parameter Max. Units

I

D

@ T

C

= 25°C Continuous Drain Current, V

GS

@ 10V 57

I

D

@ T

C

= 100°C Continuous Drain Current, V

GS

@ 10V 40 A

I

DM

Pulsed Drain Current  180

P

D

@T

C

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

V

GS

Gate-to-Source Voltage ± 20 V

I

AR

Avalanche Current 28 A

E

AR

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.8 V/ns

T

J

Operating Junction and -55 to + 175

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD - 94954D

IRF3710PbF

2 www.irf.com

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode)

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– ––– 1.2 V T

J

= 25°C, I

S

= 28A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 140 220 ns T

J

= 25°C, I

F

= 28A

Q

rr

Reverse Recovery Charge ––– 670 1010 nC di/dt = 100A/µs



t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)

Source-Drain Ratings and Characteristics

57

230

A

 Starting T

J

= 25°C, L = 0.70mH

R

G

= 25Ω, I

AS

= 28A, V

GS

=10V (See Figure 12)

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Notes:

 I

SD

≤ 28A, di/dt ≤ 380A/µs, V

DD

≤ V

(BR)DSS

,

T

J

≤ 175°C

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 This is a typical value at device destruction and represents

operation outside rated limits.

 This is a calculated value limited to T

J

= 175°C .

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, I

D

= 1mA

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 23 mΩ V

GS

= 10V, I

D

=28A 

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V V

DS

= V

GS

, I

D

= 250µA

g

fs

Forward Transconductance 32 ––– ––– S V

DS

= 25V, I

D

= 28A

––– ––– 25

µA

V

DS

= 100V, V

GS

= 0V

––– ––– 250 V

DS

= 80V, V

GS

= 0V, T

J

= 150°C

Gate-to-Source Forward Leakage ––– ––– 100 V

GS

= 20V

Gate-to-Source Reverse Leakage ––– ––– -100

nA

V

GS

= -20V

Q

g

Total Gate Charge ––– ––– 130 I

D

= 28A

Q

gs

Gate-to-Source Charge ––– ––– 26 nC V

DS

= 80V

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 43 V

GS

= 10V, See Fig. 6 and 13

t

d(on)

Turn-On Delay Time ––– 12 ––– V

DD

= 50V

t

r

Rise Time ––– 58 ––– I

D

= 28A

t

d(off)

Turn-Off Delay Time ––– 45 ––– R

G

= 2.5Ω

t

f

Fall Time ––– 47 ––– V

GS

= 10V, See Fig. 10 

Between lead,

––– –––

6mm (0.25in.)

from package

and center of die contact

C

iss

Input Capacitance ––– 3130 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 410 ––– V

DS

= 25V

C

rss

Reverse Transfer Capacitance ––– 72 ––– pF ƒ = 1.0MHz, See Fig. 5

E

AS

Single Pulse Avalanche Energy ––– 1060280 mJ I

AS

= 28A, L = 0.70mH

nH

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

L

D

Internal Drain Inductance

L

S

Internal Source Inductance ––– –––

S

D

G

I

GSS

ns

4.5

7.5

I

DSS

Drain-to-Source Leakage Current

IRF3710PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

3.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM 3.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

3.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

BOTTOM 3.5V

3.0 4.0 5.0 6.0 7.0 8.0 9.0

V

GS

, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 15V

20µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

57A

50V

IRF3710PBF

IRF3710PBF

Products related to this Datasheet