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IRF3710PBF
P1-P3
P4-P6
P7-P8
IRF3710PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, Drain-t
o-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crs
s
Ciss
V
GS
= 0V
, f = 1 M
HZ
C
iss
=
C
gs
+ C
gd
, C
ds
S
H
O
R
T
E
D
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
20
40
60
80
100
0
2
5
7
10
12
Q , T
ota
l
Ga
te C
ha
r
ge (nC)
V , Gate-
to-
Sourc
e Voltage (
V)
G
GS
I
=
D
28A
V
=
20V
DS
V
=
50V
DS
V
=
80V
DS
0.0
0.5
1.0
1.5
2.0
V
SD
, S
ource-
toD
rain V
olt
age (V)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, Drain-t
oSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single P
ulse
1msec
10msec
OPERATI
ON IN THI
S AREA
LI
MI
TED BY R
DS
(on)
100µsec
IRF3710PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a.
Switching Time
Test Circuit
Fig 10b.
Switching Time Waveforms
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T ,
Cas
e Temp
er
at
ur
e
( C)
I ,
Drai
n Current
(A)
°
C
D
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty facto
r D =
t / t
2. Peak T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rec
tangul
ar Pul
s
e Durat
ion (
s
ec)
Therm
al Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SING
LE PUL
SE
(THERMAL
RESPONSE)
IRF3710PbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
V
GS
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate
Charge Waveform
Fig 12b.
Unclamped Inductive
Waveforms
Fig 12a.
Unclamped
Inductive Test Circuit
t
p
V
(BR)DS
S
I
AS
Fig 12c.
Maximum
Avalanche Energy
Vs. Drain
Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
0
110
220
330
440
550
Star
t
ing T ,
Junct
i
on Tem
perat
ure
( C)
E , Singl
e Pulse Avalanche Energy
(mJ
)
J
AS
°
I
D
TOP
B
OTTO
M
11A
20A
28A
P1-P3
P4-P6
P7-P8
IRF3710PBF
Mfr. #:
Buy IRF3710PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 100V 57A 23mOhm 86.7nC
Lifecycle:
New from this manufacturer.
Delivery:
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IRF3710PBF